The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

An impurity-doping apparatus is provided with: a supporting plate which supports a semiconductor substrate; a wall-like block disposed above the supporting plate floating away from the semiconductor substrate, the wall-like block implements a recess inside so as to establish a space for a solution region containing impurity elements, the solution region is localized on an upper surface of the semiconductor substrate, the upper surface being opposite to an bottom surface facing to the supporting plate; and a laser optical system, configured to irradiate a laser beam onto the upper surface of the semiconductor substrate, through the solution region surrounded by the wall-like block, wherein the impurity elements are doped into a part of the semiconductor substrate by irradiation of the laser beam.

An impurity-doping apparatus is provided with: a supporting plate which supports a semiconductor substrate; a wall-like block disposed above the supporting plate floating away from the semiconductor substrate, the wall-like block implements a recess inside so as to establish a space for a solution region containing impurity elements, the solution region is localized on an upper surface of the semiconductor substrate, the upper surface being opposite to an bottom surface facing to the supporting plate; and a laser optical system, configured to irradiate a laser beam onto the upper surface of the semiconductor substrate, through the solution region surrounded by the wall-like block, wherein the impurity elements are doped into a part of the semiconductor substrate by irradiation of the laser beam.

In a step, acceptor ions are implanted from a back surface of a semiconductor substrate. In a step, a wet process of immersing the semiconductor substrate in a chemical solution including hydrofluoric acid is performed, to introduce hydrogen atoms into the semiconductor substrate. In a step, proton radiation is provided to the back surface of the semiconductor substrate, to introduce hydrogen atoms into the semiconductor substrate and form radiation-induced defects. In a step, an annealing process is performed on the semiconductor substrate, to form hydrogen-related donors by reaction of the hydrogen atoms and the radiation-induced defects and reduce the radiation-induced defects.

A method of making a semiconductor device including forming a first blanket layer on a substrate; forming a second blanket layer on the first blanket layer; patterning a first fin of a first transistor region and a second fin of a second transistor region in the first blanket layer and the second blanket layer; depositing a mask on the second transistor region; removing the first fin to form a trench; growing a first semiconductor layer in the trench where the first fin was removed; and growing a second semiconductor layer on the first semiconductor layer.

A silicon-on-insulator substrate includes: (1) a high-resistivity base layer including silicon and a trap-rich region including arsenic diffused within a first side of the high-resistivity base layer, wherein the trap-rich region has a thickness that is in a range of 1 to 10 microns and a trap density that is in a range of 0.8*10.sup.10 cm.sup.2 eV.sup.1 to 1.2*10.sup.10 cm.sup.2 eV.sup.1, wherein the high-resistivity base layer has resistivity in a range of 50 to 100 ohm-meters and a thickness in a range of 500 to 700 microns; (2) a silicon dioxide layer positioned on the first side of the high-resistivity base layer and having a thickness that is in a range of 1000 to 5000 angstroms; and (3) a transfer layer positioned on the silicon dioxide layer, wherein the transfer layer comprises a silicon wafer having a thickness that is a range of 500 to 5000 angstroms.

Methods for adjusting a work function of a structure in a substrate leverage near surface doping. In some embodiments, a method for adjusting a work function of a structure in a substrate may include coating surfaces of the structure to form a doping layer in a non-solid phase that contains dopants on the surfaces of the structure and performing a dopant diffusion process using an oxidation process to drive the dopants through the surfaces the structure to embed the dopants in the structure to adjust the work function of the structure near the surfaces to form an abrupt junction profile and form an oxidation layer on the surfaces of the structure. The coating of the surfaces of the structure may be performed using a gas-phase or liquid-phase process.

A laser doping device includes: a solution supply system configured to supply a solution containing dopant to a doping region; a pulse laser system configured to output pulse laser light including a plurality of pulses, the pulse laser light transmitting through the solution; a first control unit configured to control a number of pulses of the pulse laser light for allowing the doping region to be irradiated, and to control a fluence of the pulse laser light in the doping region; and a second control unit configured to control a flow velocity of the solution so as to move bubbles, from the doping region, occurring in the solution every time of irradiation with the pulse.

A laser doping device includes: a solution supply system configured to supply a solution containing dopant to a doping region; a pulse laser system configured to output pulse laser light including a plurality of pulses, the pulse laser light transmitting through the solution; a first control unit configured to control a number of pulses of the pulse laser light for allowing the doping region to be irradiated, and to control a fluence of the pulse laser light in the doping region; and a second control unit configured to control a flow velocity of the solution so as to move bubbles, from the doping region, occurring in the solution every time of irradiation with the pulse.