The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

The present disclosure proposes an oxide TFT and its forming method. The method includes providing a substrate, forming an active layer on top of the substrate, and performing plasma surface treatment on the active layer so to get an active layer with roughness smaller than 10 nm. The deposited active layer has high roughness and defects. However, plasma surface treatment is performed on the active layer so to reasonably control types of gas ions selected, and technical parameters such as the energy and angle of ion bombardment, so to effectively press the actively layer. The pressing force can be broken down as a vertical force and a horizontal force, and it can polish the roughness and defects on the surface of the oxide semi-conductor layer, while enhancing the adhesion of the oxide semi-conductor layer.

The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.

The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

An electrically inactive betavoltaic battery, an electrically active betavoltaic battery, and methods of making the same are provided. In implementations, a method of making an electrically active betavoltaic battery includes: providing an electrically inactive betavoltaic battery device having one or more diodes incorporating a semiconductor material layer having a stable non-radioactive isotope; and irradiating the electrically inactive betavoltaic battery device with thermal neutrons, thereby causing the conversion of at least a portion of the stable non-radioactive isotope to a radionuclide and creating the electrically active betavoltaic battery, wherein the semiconductor material layer acts as both an electron emitter and an electron absorber simultaneously.