An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

A method of manufacturing a thin-film transistor (TFT) and a TFT are provided. The method of manufacturing the TFT includes, after depositing a semiconductor layer, oxidizing regions of the semiconductor layer corresponding to sputtering target gaps, so that oxygen vacancies at the regions corresponding to the sputtering target gaps can be decreased and oxygen vacancies on the semiconductor layer can be more uniform.

A method of manufacturing a thin-film transistor (TFT) and a TFT are provided. The method of manufacturing the TFT includes, after depositing a semiconductor layer, oxidizing regions of the semiconductor layer corresponding to sputtering target gaps, so that oxygen vacancies at the regions corresponding to the sputtering target gaps can be decreased and oxygen vacancies on the semiconductor layer can be more uniform.

Provided is a semiconductor element including at least a multilayer structure including a semiconductor layer, a first metal layer, a second metal layer and a third metal layer, the semiconductor layer including an oxide semiconductor film, the first metal layer, the second metal layer and the third metal layer being arranged on the semiconductor layer, the first metal layer, the second metal layer and the third metal layer respectively including one or two or more different metals, the first metal layer being in ohmic contact with the semiconductor layer, the second metal layer being disposed between the first metal layer and the third metal layer, and the second metal layer containing Pt or/and Pd.

Field effect transistors and method of making. The field effect transistors include a pair of active regions in a channel layer, a channel region located between the pair of active regions and a self-aligned passivation layer located on a surface of the pair of active regions.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a first insulating layer, a third step of forming a first conductive film over the first insulating layer, a fourth step of etching part of the first conductive film to form a first conductive layer, thereby forming a first region over the semiconductor layer that overlaps with the first conductive layer and a second region over the semiconductor layer that does not overlap with the first conductive layer, and a fifth step of performing first treatment on the conductive layer. The first treatment is plasma treatment in an atmosphere including a mixed gas of a first gas containing an oxygen element but not containing a hydrogen element, and a second gas containing a hydrogen element but not containing an oxygen element.

A light emitting device includes a vertical stack of a light emitting diode and a field effect transistor that controls the light emitting diode. An isolation layer is present between the light emitting diode and the field effect transistor, and an electrically conductive path electrically shorts a node of the light emitting diode to a node of the field effect transistor. The field effect transistor may include an indium gallium zinc oxide (IGZO) channel and may be located over the isolation layer. Alternatively, the field effect transistor may be a high-electron-mobility transistor (HEMT) including an epitaxial semiconductor channel layer and the light emitting diode may be located over the HEMT.

The present disclosure provides a display substrate, a method for preparing the same, and a display device. The method for preparing the display substrate includes a step of preparing a pixel driving circuit on a substrate, the step specifically includes: preparing a first active layer of an oxide transistor on the substrate; preparing a barrier layer on a surface of the first active layer away from the substrate, an orthogonal projection of the barrier layer on the substrate covering an orthogonal projection of the first active layer on the substrate; preparing a low-temperature polysilicon transistor is on the substrate; and preparing a first gate insulating layer, a first gate electrode, a first input electrode, and a first output electrode of the oxide transistor on the substrate.

A semiconductor device includes a fin structure, a two-dimensional (2D) material channel layer, a ferroelectric layer, and a metal layer. The fin structure extends from a substrate. The 2D material channel layer wraps around at least three sides of the fin structure. The ferroelectric layer wraps around at least three sides of the 2D material channel layer. The metal layer wraps around at least three sides of the ferroelectric layer.

A semiconductor device includes a fin structure, a two-dimensional (2D) material channel layer, a ferroelectric layer, and a metal layer. The fin structure extends from a substrate. The 2D material channel layer wraps around at least three sides of the fin structure. The ferroelectric layer wraps around at least three sides of the 2D material channel layer. The metal layer wraps around at least three sides of the ferroelectric layer.