Patent classifications
H01L21/449
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR ELEMENTS
A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures. A bonding surface of at least one of the first conductive structures and the second conductive structures includes a frangible coating.
Megasonic multifrequency apparatus with matched transducer
A megasonic processing apparatus matches the fundamental resonant or higher-level harmonic frequencies of megasonic thickness-mode transducers to the fundamental resonant or higher-level harmonic frequencies of a plate or other mounting structure upon which the transducers are mounted. The multifrequency transducers are piezoelectric transducers operating in thickness mode at different operating frequencies. The thickness of the mounting plate at the transducer locations is selected to provide a resonant or harmonic frequency matched to that of its corresponding transducer. Two or more megasonic transducers are bonded to the same radiating surface.
Megasonic multifrequency apparatus with matched transducer
A megasonic processing apparatus matches the fundamental resonant or higher-level harmonic frequencies of megasonic thickness-mode transducers to the fundamental resonant or higher-level harmonic frequencies of a plate or other mounting structure upon which the transducers are mounted. The multifrequency transducers are piezoelectric transducers operating in thickness mode at different operating frequencies. The thickness of the mounting plate at the transducer locations is selected to provide a resonant or harmonic frequency matched to that of its corresponding transducer. Two or more megasonic transducers are bonded to the same radiating surface.
ULTRASONIC BONDING FOR PROCESS CHAMBER COMPONENTS
An article includes a body and an ultrasonic bonded layer deposited on the body. The ultrasonic bonded layer includes a first layer of a first material. The first material includes a metal or metal alloy, The ultrasonic bonded layer further includes a second layer of a second material bonded to the first layer. The second material includes a metal matrix composite material.
ULTRASONIC BONDING FOR PROCESS CHAMBER COMPONENTS
An article includes a body and an ultrasonic bonded layer deposited on the body. The ultrasonic bonded layer includes a first layer of a first material. The first material includes a metal or metal alloy, The ultrasonic bonded layer further includes a second layer of a second material bonded to the first layer. The second material includes a metal matrix composite material.