An SGT is formed that includes Si pillars. The SGT includes WSi.sub.2 layers serving as wiring alloy layers and constituted by first alloy regions that are connected to the entire peripheries of impurity regions serving as sources or drains located in lower portions of the Si pillars, are formed in a self-aligned manner with the impurity regions in a tubular shape, and contain the same impurity atom as the impurity regions and a second alloy region that is partly connected to the peripheries of the first alloy regions and contains the same impurity atom as the impurity regions.

An SGT is formed that includes Si pillars. The SGT includes WSi.sub.2 layers serving as wiring alloy layers and constituted by first alloy regions that are connected to the entire peripheries of impurity regions serving as sources or drains located in lower portions of the Si pillars, are formed in a self-aligned manner with the impurity regions in a tubular shape, and contain the same impurity atom as the impurity regions and a second alloy region that is partly connected to the peripheries of the first alloy regions and contains the same impurity atom as the impurity regions.

Present disclosure provides a method for multi-level etch. The method includes providing a substrate, forming a first reference feature over a control region of the substrate, forming an etchable layer over the first reference feature and a target region over the substrate, patterning a masking layer over the etchable layer, the masking layer having a first opening projecting over the control region and a second opening projecting over the target region, and removing a portion of the etchable layer through the first opening and the second opening until the first reference feature is reached. A semiconductor sensing device manufactured by the multi-level etch is also disclosed.

The present application provides a method and a device of chemical mechanical polishing (CMP). The method comprises providing a semiconductor wafer to be subjected to polishing; conducting a CMP process to the wafer, wherein the wafer is on a first plane; conducting a hanging treatment, wherein, in the hanging treatment, the wafer is on a second plane above the first plane, the wafer is hanged to expose the lower surface, and the wafer is in rotation. According to the present application, the hanging treatment can remove the slurry, the polishing particles and byproducts from the wafer surface, therefore, it prevents from the adverse effects caused by the polishing particles and byproducts on the wafer in the following process.

The present application provides a method and a device of chemical mechanical polishing (CMP). The method comprises providing a semiconductor wafer to be subjected to polishing; conducting a CMP process to the wafer, wherein the wafer is on a first plane; conducting a hanging treatment, wherein, in the hanging treatment, the wafer is on a second plane above the first plane, the wafer is hanged to expose the lower surface, and the wafer is in rotation. According to the present application, the hanging treatment can remove the slurry, the polishing particles and byproducts from the wafer surface, therefore, it prevents from the adverse effects caused by the polishing particles and byproducts on the wafer in the following process.

The present disclosure provides a display substrate, a method for preparing the same, and a display device including the display substrate. The method includes: forming a conductive layer; forming a first photoresist pattern and a second photoresist pattern on the conductive layer, in which the adhesion between the first photoresist pattern and the conductive layer is less than the adhesion between the second photoresist pattern and the conductive layer; and etching the conductive layer by using the first photoresist pattern and the second photoresist pattern as masks to form a first conductive pattern and a second conductive pattern, respectively, in which a line width difference between the first conductive pattern and the first photoresist pattern is greater than a line width difference between the second conductive pattern and the second photoresist pattern.

A plasma computer numerically controlled (CNC) cutting machine is controlled by a computers. In an embodiment, the computer executes a CNC program to control movement of a plasma torch to cut parts from a workpiece while a spectrometer determines emissions spectra of light emitted in a brief time window as the torch begins to cut the workpiece. The spectrometer cooperates with the computer to analyze the metal as it is being cut by the CNC cutting machine and determine a composition. In embodiments, the composition is compared to an expected composition and saved in a database with identifying information; in a particular embodiment the database is queried to provide identifying information of metal having similar composition to the workpiece.

A plasma computer numerically controlled (CNC) cutting machine is controlled by a computers. In an embodiment, the computer executes a CNC program to control movement of a plasma torch to cut parts from a workpiece while a spectrometer determines emissions spectra of light emitted in a brief time window as the torch begins to cut the workpiece. The spectrometer cooperates with the computer to analyze the metal as it is being cut by the CNC cutting machine and determine a composition. In embodiments, the composition is compared to an expected composition and saved in a database with identifying information; in a particular embodiment the database is queried to provide identifying information of metal having similar composition to the workpiece.

A substrate processing method is a method of processing a substrate on which a metal-containing liquid for a film below a resist is applied, wherein prior to a heating process of performing a heat treatment on the substrate applied with the metal-containing liquid, the substrate processing method includes: a deprotection promoting process of promoting deprotection of functional groups in a material for the film included in the substrate on which the metal-containing liquid has been applied; a solvent removing process of removing a solvent included in the metal-containing liquid on the substrate; and a moisture absorbing process of bringing a surface of the substrate into contact with moisture.

A substrate processing method is a method of processing a substrate on which a metal-containing liquid for a film below a resist is applied, wherein prior to a heating process of performing a heat treatment on the substrate applied with the metal-containing liquid, the substrate processing method includes: a deprotection promoting process of promoting deprotection of functional groups in a material for the film included in the substrate on which the metal-containing liquid has been applied; a solvent removing process of removing a solvent included in the metal-containing liquid on the substrate; and a moisture absorbing process of bringing a surface of the substrate into contact with moisture.