Patent classifications
H01L21/4807
METHODS AND SYSTEMS TO IMPROVE PRINTED ELECTRICAL COMPONENTS AND FOR INTEGRATION IN CIRCUITS
Methods and systems to improve printed electrical components and for integration in circuits are disclosed. Passive components, e.g., capacitors, resistors and inductors, can be printed directly into a solid ceramic block using additive manufacturing. A grounded conductive plane or a conductive cage may be placed between adjacent electrical components, or around each component, to minimize unwanted parasitic effects in the circuits, such as, e.g., parasitic capacitance or parasitic inductance. Resistors may be printed in non-traditional shapes, for example, S-shape, smooth S-shape, U-shape, V-shape, Z-shape, zigzag-shape, and any other acceptable alternative configurations. The flexibility in shapes and sizes of the printed resistors allows optimal space usage of the ceramic block. The present invention also discloses an electrical component comprising combined predetermined values of capacitance, resistance and inductance. The integration and adjustability of a multi-property device can provide significant advantages in electronics manufacturing.
Aluminum nitride sintered compact and method for producing same
An aluminum nitride sintered compact containing aluminum nitride crystal grains and composite oxide crystal grains containing a rare earth element and an aluminum element, wherein a median diameter of the aluminum nitride crystal grains is 2 m or less; 10 to 200 intergrain voids having a longest diameter of 0.2 to 1 m are dispersed in a region of a cross section of 100 m in square; and the carbon atom content is less than 0.10% by mass. Also disclosed is a method of producing the aluminum nitride sintered compact.
Circuit substrate and semiconductor device
To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.
CERAMIC ARTICLE, SEMICONDUCTOR APPARATUS FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING A CERAMIC ARTICLE
A ceramic article includes a ceramic body including a spinel (MgAl.sub.2O.sub.4) structure, wherein a ratio of a density of the spinel structure to a theoretical density of a spinel is greater than 99.5%. A semiconductor apparatus for manufacturing a semiconductor structure includes a ceramic article including a spinel (MgAl.sub.2O.sub.4) structure, wherein a ratio of a density of the spinel structure to a theoretical density of a spinel is greater than 99.5%. A method of manufacturing a ceramic article includes providing a green body; heating the green body to a sintering temperature; compressing the green body; applying a electrical pulse to the green body; and forming a ceramic body including a spinel (MgAl.sub.2O.sub.4) structure after heating, compressing and applying the electrical pulse to the green body.
Substrate
A substrate is disclosed. In an embodiment, a substrate includes a ceramic main body, an organic surface structure on at least one first outer face of the ceramic main body and outer redistribution layers integrated into the organic surface structure.
Semiconductor module, method for manufacturing the same and power conversion apparatus
A conductive thin-film thinner than the undersurface electrode is provided outside the undersurface electrode on the undersurface of the ceramic substrate and connected to the undersurface electrode. A length from an outer circumferential part of the undersurface electrode to an outer circumferential pert of the ceramic substrate is equal to a length from an outer circumferential part of the top surface electrode to an outer circumferential part of the ceramic substrate. A thickness of the conductive thin-film is half or less than a thickness of the ceramic substrate.
MULTI-PIECE WIRING SUBSTRATE, ELECTRONIC COMPONENT HOUSING PACKAGE, ELECTRONIC DEVICE, AND ELECTRONIC MODULE
A multi-piece wiring substrate includes a matrix substrate including first and second insulating layers, and interconnection substrate regions arranged in a matrix. The matrix substrate includes dividing grooves opposing each other and disposed along boundaries between the interconnection substrate regions, and through-holes penetrating the matrix substrate in a thickness direction at positions where the dividing grooves are disposed. The inner surface conductor gradually decreases in thickness from a thick portion in a middle of the inner surface conductor, to thin portions disposed on a side of a boundary between the first and second insulating layers and on a first main surface side, and includes inclination portions each of which gradually increases in thickness from a boundary between corresponding one of the dividing grooves and the inner surface conductor to an inner surface of the inner surface conductor, in vertical sectional view.
Cavity wall structure for semiconductor packaging
An improved method for forming a semiconductor package is disclosed herein. The method includes forming a multi-layer package substrate having a first major surface and a second major surface opposite to the first major surface. The package substrate comprises a recess region. A semiconductor die is attached to the die region within the recess region. A dam structure is formed within the recess region. The dam structure surrounds the semiconductor die and extends upward to a height below the first major surface of the package substrate. A liquid encapsulant material is dispensed into the recess region. The liquid encapsulant material is surrounded by the dam structure. The liquid encapsulant extends upwardly to a height below the height of the dam structure. A package lid is attached to the package substrate.
WIRING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A wiring substrate includes a substrate body composed of a plurality of ceramic layers (insulating materials) and having a front surface and a back surface located on opposite sides thereof and having a side surface located between the front surface and the back surface. The outline of the substrate body in a plan view which is a view from the front surface side is composed of a plurality of curved portions separated from one another and a plurality of straight portions each located between adjacent ones of the curved portions. The total length of the curved portions in the plan view is at least 40% of the sum of the total length of the curved portions and the total length of the straight portions.
Wiring board, electronic device, and electronic module
A wiring board includes an insulating substrate that is rectangular in a plan view, a plurality of mount electrodes arranged to face each other on a first main surface of the insulating substrate along a pair of opposing sides of the insulating substrate in a plan view, a plurality of terminal electrodes arranged to face each other on a second main surface of the insulating substrate along the pair of opposing sides of the insulating substrate in a perspective plan view, and an inner metal layer arranged inside the insulating substrate and extending in a direction perpendicular to the pair of opposing sides of the insulating substrate in a perspective plan view.