A silicon carbide composite that is lightweight and has high thermal conductivity as well as a low thermal expansion coefficient close to that of a ceramic substrate, particularly a silicon carbide composite material suitable for heat dissipating components that are required to be particularly free of warping, such as heat sinks. A method for manufacturing a silicon carbide composite obtained by impregnating a porous silicon carbide molded body with a metal having aluminum as a main component, wherein the method for manufacturing a silicon carbide composite material is characterized in that the porous silicon carbide molded article is formed by a wet molding method, and preferably the wet molding method is a wet press method or is a wet casting method.

A ceramic substrate manufacturing method and a ceramic substrate manufactured thereby, may include a seed layer, a brazing filler layer, and a metal foil that are laminated on a ceramic substrate and that are brazed such that the metal foil is firmly bonded to the ceramic substrate by a brazing joint layer. Such methods and devices may substantially improve the adhesion of the metal foil and the ceramic substrate.

A power device includes a substrate comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a barrier layer coupled to the first adhesion layer, a bonding layer coupled to the barrier layer, and a substantially single crystal layer coupled to the bonding layer. The power device also includes a buffer layer coupled to the substantially single crystal layer and a channel region coupled to the buffer layer. The channel region comprises a first end, a second end, and a central portion disposed between the first end and the second end. The channel region also includes a channel region barrier layer coupled to the buffer layer. The power device further includes a source contact disposed at the first end of the channel region, a drain contact disposed at the second end of the channel region, and a gate contact coupled to the channel region.

A method includes disposing at least one power device between a first direct bonded metal (DBM) substrate and a second DMB substrate and thermally coupling a plurality of pipes to a top side of the first DBM substrate opposite a side of the first DBM substrate with the at least one power device. The plurality of pipes is configured to carry cooling fluids in thermal contact with the first DBM substrate.

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

The present disclosure provides a chip packaging method and a chip packaging structure. The chip packaging method includes: providing an encapsulated grain and a packaging substrate, the encapsulated grain including a first hybrid bonding structure; wherein the packaging substrate includes a front side and a back side opposite to each other; a second hybrid bonding structure is formed on the front side of the packaging substrate and a connection pin is formed on the back side of the packing substrate; the second hybrid bonding structure and the connection pin are electrically connected through a third connecting metal column penetrating the packaging substrate; and bonding together the first hybrid bonding structure of the encapsulated grain and the second hybrid bonding structure of the packaging substrate by medium-to-medium and metal-to-metal aligned bonding such that the encapsulated grain is bonded to the packaging substrate.

A bonded object production method according to an embodiment uses a continuous furnace to process a stacked body including a metal member, a ceramic member, and a brazing material layer located therebetween, while conveying the stacked body; and the method includes a process of heating the stacked body in an inert atmosphere from 200? C. to a bonding temperature at an average temperature raising rate of the stacked body of not less than 15? C./min, a process of bonding the stacked body in an inert atmosphere at the bonding temperature that is within a range of not less than 600? C. and not more than 950? C., and a process of cooling the stacked body from the bonding temperature to 200? C. at an average temperature lowering rate of the stacked body of not less than 15? C./min. A ceramic substrate is favorably a silicon nitride substrate.

A semiconductor device includes a substrate, an insulating layer provided over the substrate, a collection of metal particles exposed on the surface of the insulating layer, and a diamond layer provided on the surface of the insulating layer on which the metal particles are exposed. By controlling the surface density and particle size of the metal particles on the surface of the insulating layer, the surface density of diamond nuclei that are formed on the surface is controlled. Diamond grains are formed by crystal growth using the diamond nuclei as starting material, thereby forming a diamond layer. The control of the surface density of the diamond nuclei results in forming, by the crystal growth, the diamond grains with a grain size exhibiting a relatively high thermal conductivity in the crystal growth initial layer of the diamond layer and improving the thermal conductivity between the diamond layer and the substrate.

According to one embodiment, a semiconductor device includes a semiconductor chip having a first electrode on a first surface, a metal plate, and a first conductive bonding sheet that is disposed between the first surface of the semiconductor chip and the metal plate and bonds the first electrode to the metal plate.

A described example includes: a ceramic package having a board side surface and an opposite top side surface; a heat slug mounted to the board side surface of the ceramic package, forming a bottom surface in a die cavity; leads mounted to conductive lands on the ceramic package; sidewall metallization extending from the conductive lands and covering a portion of one of the sides of the ceramic package; copper tungsten alloy conductor layers formed in the ceramic package and spaced by dielectric layers; bond fingers formed of a conductor layer and extending to the die cavity; a semiconductor device mounted over the heat slug, and having bond pads on a device side surface facing away from a surface of the heat slug; electrical connections between bond pads on the semiconductor device and the bond fingers; and a lid mounted to the top side surface of the ceramic package.