Disclosed is a method of packaging a power amplifier module. The method of packaging a power amplifier module includes providing a unified pattern including a ceramic layer and a pattern formed on the ceramic layer, bonding the unified pattern on a metal layer, and depositing a ceramic sidewall, on which at least one external signal connection lead line is formed, on the unified pattern bonded the metal layer.

There is provided an aluminum-ceramic bonded substrate in which an aluminum plate comprising aluminum alloy is directly bonded to one surface of a ceramic substrate and an aluminum base plate comprising aluminum alloy is directly bonded to the other surface of the ceramic substrate, wherein the aluminum alloy is the aluminum alloy containing 0.05% by mass or more and 3.0% by mass or less of at least one element selected from nickel and iron in total amount, containing 0.01% by mass or more and 0.1% by mass or less of at least one element selected from titanium and zirconium in total amount, and containing 0% by mass or more and 0.05% by mass or less of at least one element selected from boron or carbon in total amount, with a balance being aluminum.

A power device includes a substrate comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a barrier layer coupled to the first adhesion layer, a bonding layer coupled to the barrier layer, and a substantially single crystal layer coupled to the bonding layer. The power device also includes a buffer layer coupled to the substantially single crystal layer and a channel region coupled to the buffer layer. The channel region comprises a first end, a second end, and a central portion disposed between the first end and the second end. The channel region also includes a channel region barrier layer coupled to the buffer layer. The power device further includes a source contact disposed at the first end of the channel region, a drain contact disposed at the second end of the channel region, and a gate contact coupled to the channel region.

Methods and systems to improve printed electrical components and for integration in circuits are disclosed. Passive components, e.g., capacitors, resistors and inductors, can be printed directly into a solid ceramic block using additive manufacturing. A grounded conductive plane or a conductive cage may be placed between adjacent electrical components, or around each component, to minimize unwanted parasitic effects in the circuits, such as, e.g., parasitic capacitance or parasitic inductance. Resistors may be printed in non-traditional shapes, for example, S-shape, smooth S-shape, U-shape, V-shape, Z-shape, zigzag-shape, and any other acceptable alternative configurations. The flexibility in shapes and sizes of the printed resistors allows optimal space usage of the ceramic block. The present invention also discloses an electrical component comprising combined predetermined values of capacitance, resistance and inductance. The integration and adjustability of a multi-property device can provide significant advantages in electronics manufacturing.

A wiring board includes an insulating substrate that is rectangular in a plan view, a plurality of mount electrodes arranged to face each other on a first main surface of the insulating substrate along a pair of opposing sides of the insulating substrate in a plan view, a plurality of terminal electrodes arranged to face each other on a second main surface of the insulating substrate along the pair of opposing sides of the insulating substrate in a perspective plan view, and an inner metal layer arranged inside the insulating substrate and extending in a direction perpendicular to the pair of opposing sides of the insulating substrate in a perspective plan view.

A power device includes a substrate comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a barrier layer coupled to the first adhesion layer, a bonding layer coupled to the barrier layer, and a substantially single crystal layer coupled to the bonding layer. The power device also includes a buffer layer coupled to the substantially single crystal layer and a channel region coupled to the buffer layer. The channel region comprises a first end, a second end, and a central portion disposed between the first end and the second end. The channel region also includes a channel region barrier layer coupled to the buffer layer. The power device further includes a source contact disposed at the first end of the channel region, a drain contact disposed at the second end of the channel region, and a gate contact coupled to the channel region.

The present invention includes: a substrate 3, a rectangular frame-shaped substrate bank section 5 provided on the substrate 3 and including four corner portions 5A, and a metal layer 9 provided on a top surface 5Aa of the substrate bank section 5. A top surface 5Aa of the corner portions 5A of the substrate bank section 5 may have an inclined portion S slanted downward. An electronic component housing package may have a lid welded onto the metal layer 9 provided on the substrate bank section 5 of the electronic component storage substrate.

An electronic device includes a substrate having a surface, functional metallic traces on a first portion of the surface that are electrically connected to carry current in the electronic device and have a first density, and dummy metallic traces on a second portion of the surface that are electrically isolated from the functional metallic traces and have a second density that is within at least 50% of the first density.

A semiconductor package includes a first redistribution substrate, a connection substrate on the first redistribution substrate and having a first opening and a second opening that penetrate the connection substrate, a semiconductor chip on the first redistribution substrate and in the first opening of the connection substrate, a chip module on the first redistribution substrate and in the second opening of the connection substrate, and a molding layer that covers the semiconductor chip, the chip module, and the connection substrate. The chip module includes an inner substrate and a first passive device on the inner substrate. In the second opening, the molding layer covers the first passive device on the inner substrate.

An electronic device component comprising: a support frame comprising a top surface, a bottom surface, and an opening extending between the top surface and bottom surface of the support frame; a diamond heat spreader comprising a wafer of synthetic diamond material having a top face, a bottom face, wherein the diamond heat spreader is bonded to the support frame so that the diamond heat spreader extends across the opening in the support frame; and one or more semiconductor components mounted on, and bonded to, the top face of the diamond heat spreader, wherein the support frame is formed of an electrically insulating ceramic material to which the diamond heat spreader is bonded.