A method for producing a metal-ceramic substrate with at least one electrically conductive via, in which one metal layer, respectively, is attached in a planar manner to a ceramic plate or a ceramic layer to each of two opposing surface sides of the ceramic layer is provided. The method includes introducing a metal-containing, powdery and/or liquid substance into a hole in the ceramic layer delimiting the via prior to the attachment of both metal layers, or subsequent to the attachment of one of the two metal layers to form an assembly. Prior to the attachment of the other one of the two metal layers, and the assembly is subjected to a high-temperature step above 500 C. in which the metal-containing substance wets the ceramic layer at least partially with a wetting angle of less than 90.

A ceramic substrate includes a substrate main body, and a conductor layer provided inside of the substrate main body. The substrate main body includes an insulator layer that is ceramics composed of aluminum oxide, and a composite oxide layer of aluminum and silicon, the composite oxide layer being formed between the insulator layer and the conductor layer.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A silicon carbide composite that is lightweight and has high thermal conductivity as well as a low thermal expansion coefficient close to that of a ceramic substrate, particularly a silicon carbide composite material suitable for heat dissipating components that are required to be particularly free of warping, such as heat sinks. A method for manufacturing a silicon carbide composite obtained by impregnating a porous silicon carbide molded body with a metal having aluminum as a main component, wherein the method for manufacturing a silicon carbide composite material is characterized in that the porous silicon carbide molded article is formed by a wet molding method, and preferably the wet molding method is a wet press method or is a wet casting method.

The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1t2|0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm. Due to above structure, even if the silicon nitride circuit board has a large difference in thickness between the metal plates attached on front and rear sides of the silicon nitride substrate, TCT properties can be greatly improved.

A ceramic article. In some embodiments, the ceramic article includes a ceramic body composed of a ceramic material; and a first conductive trace, the first conductive trace having a first portion entirely within the ceramic material, the first portion having a length of 0.5 mm and transverse dimensions less than 500 microns, the ceramic material including a plurality of ceramic particles in a ceramic matrix.

Provided are a ceramic substrate and a method of manufacturing the same, which suppress a warpage phenomenon caused by a difference in volumes occupied by upper and lower metal layers of a ceramic base material and controls areas of the upper and lower metal layers especially when thicknesses of the upper and lower metal layers on the ceramic base material are equal to each other, thereby reducing a defect rate of the ceramic substrate.

A method includes applying a first material to a first surface, the first material including a matrix material and an adhesion promoter. The matrix material is configured to cure when heated to a defined temperature for a defined period of time. The adhesion promoter is configured to be activated when heated to a temperature that is higher than the defined temperature and/or for a period of time that is longer than the defined period of time. The method further includes heating the first material to the defined temperature for the defined period of time such that the matrix material cures and the adhesion promoter remains inactive, thereby forming a pre-seal.

A semiconductor module includes: a power electronic substrate having a first conductive layer, a second conductive layer, and an insulating layer separating the first and second conductive layers; at least one semiconductor die arranged over the first conductive layer; and a molded body having a first side and an opposite second side. The molded body encapsulates the semiconductor die and partially encapsulates the power electronic substrate such that the second conductive layer is at least partially exposed from the second side of the molded body. The insulating layer protrudes beyond a contour of the first conductive layer and/or beyond a contour of the second conductive layer at lateral sides of the power electronic substrate by a nonzero protrusion. A ratio of a thickness of the insulating layer to a length of the protrusion is 0.8 or more.

In some aspects, the techniques described herein relate to a signal distribution assembly configured to conduct signals in a semiconductor device module, the signal distribution assembly including: a metal layer, the metal layer having: a first side, the first side being planar; and a second side opposite the first side, the second side being non-planar and including: a base portion; a first post extending from the base portion; and a second post extending from the base portion. The metal layer can be pre-molded using a molding compound disposed on the second side of the metal later, with respective surfaces of the first post and the second posted exposed through the molding compound, and or the metal layer can be coupled with a thermally conductive insulator (e.g., ceramic) layer.