Various multi-die arrangements and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing a semiconductor chip device is provided. A redistribution layer (RDL) structure is fabricated with a first side and second side opposite to the first side. An interconnect chip is mounted on the first side of the RDL structure. A first semiconductor chip and a second semiconductor chip are mounted on the second side of the RDL structure after mounting the interconnect chip. The RDL structure and the interconnect chip electrically connect the first semiconductor chip to the second semiconductor chip.

A package structure including a first chip, a second chip, a dielectric body, a third chip, an encapsulant, a first conductive terminal, and a circuit layer is provided. The dielectric body covers the first chip and the second chip. The third chip is disposed on the dielectric body such that a third active surface thereof faces a first active surface of the first chip or a second active surface of the second chip. The encapsulant covers the third chip. The first conductive terminal is disposed on the dielectric body and is opposite to the third chip. The circuit layer includes a first circuit portion and a second circuit portion. The first circuit portion penetrates the dielectric body. The first chip, the second chip, or the third chip is electrically connected to the first conductive terminal through the first circuit portion. The second circuit portion is embedded in the dielectric body.

A package carrier includes a substrate, at least one interposer disposed in at least one opening of the substrate, a conductive structure layer, a first build-up structure, and a second build-up structure. The interposer includes a glass substrate, at least one conductive via, at least one first pad, and at least one second pad. The conductive via passes through the glass substrate, and the first and the second pads are disposed respectively on an upper surface and a lower surface of the glass substrate opposite to each other and are connected to opposite ends of the conductive via. The conductive structure layer is disposed on the substrate and is structurally and electrically connected to the first and the second pads. The first and the second build-up structures are disposed respectively on the first and the second surfaces of the substrate and are electrically connected to the conductive structure layer.

An interposer may comprise a metal layer above a substrate. A dam or a plurality of dams may be formed above the metal layer. A dam surrounds an area of a size larger than a size of a die which may be connected to a contact pad above the metal layer within the area. A dam may comprise a conductive material, or a non-conductive material, or both. An underfill may be formed under the die, above the metal layer, and contained within the area surrounded by the dam, so that no underfill may overflow outside the area surrounded by the dam. Additional package may be placed above the die connected to the interposer to form a package-on-package structure.

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Described herein are methods of manufacturing dual-sided packaged electronic modules to control the distribution of an under-fill material between one or more components and a packaging substrate. The disclosed technologies include using a dam on a packaging substrate that is configured to prevent or limit the flow of a capillary under-fill material. This can prevent or limit the capillary under-fill material from flowing onto or contacting other components or elements on the packaging substrate, such as solder balls of a ball-grid array. Accordingly, the disclosed technologies control under-fill for dual-sided ball grid array packages using a dam on a packaging substrate.

A method includes forming a first redistribution line, forming a polymer layer including a first portion encircling the first redistribution line and a second portion overlapping the first redistribution line, forming a pair of differential transmission lines over and contacting the polymer layer, and molding the pair of differential transmission lines in a molding compound. The molding compound includes a first portion encircling the pair of differential transmission lines, and a second portion overlapping the pair of differential transmission lines. An electrical connector is formed over and electrically coupling to the pair of differential transmission lines.

An array of through-silicon via (TSV) structures is formed through a silicon substrate, and package-side metal pads are formed on backside surfaces of the array of TSV structures. The silicon substrate is disposed over a carrier substrate, and an encapsulant interposer frame, such as an epoxy molding compound (EMC) interposer frame is formed around the silicon substrate. A die-side redistribution structure is formed over the silicon substrate and the EMC interposer frame, and at least one semiconductor die is attached to the die-side redistribution structure. The carrier substrate is removed from underneath the package-side metal pads. A package-side redistribution structure is formed on the package-side metal pads and on the EMC interposer frame. Overlay tolerance between the package-side redistribution wiring interconnects and the package-side metal pads increases due to increased areas of the package-side metal pads.

A package structure including a first circuit board, a second circuit board, an encapsulant, a plurality of conductive terminals, and a package device is provided. The first circuit board has a first top surface and a first bottom surface opposite to each other. The second circuit board has a second top surface and a second bottom surface opposite to each other. The encapsulant encapsulates the first and second circuit boards. The conductive terminals are disposed on the first or second bottom surface and electrically connected to the first or second circuit board. The package device is disposed on the first or second top surface and electrically connected to the first and second circuit boards. The package device includes a first chip, a second chip, a chip encapsulant, a circuit layer, and a plurality of conductive package terminals. A manufacturing method of a package structure is also provided.

The present invention addresses the problem of providing a protection member which is for a semiconductor and has excellent pattern retention at high temperatures and moisture resistance and has good adhesion to a semiconductor circuit, etc. for long period of time. The protection member which is for a semiconductor and solves said problem, includes a cured article of an organic polymerizable compound having a functional group containing an oxygen atom and/or a nitrogen atom. The absolute value of the difference between the linear expansion coefficient at 150° C. of the cured article and the linear expansion coefficient at 25° C. of the cured article is 55 or less.