A package substrate includes a dielectric layer, a conductive pad and a wiring pattern on the dielectric layer, a protection layer on the dielectric layer, the protection layer covering the wiring pattern, and an undercut region between facing surfaces of the dielectric layer and the protection layer, the undercut region exposing a sidewall of the wiring pattern, and a width of the undercut region being less than a width of the wiring pattern.

This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO.sub.2 film, a Si.sub.3N.sub.4 film and a second SiO.sub.2 film stacked in this order, wherein the first SiO.sub.2 film is formed by a thermal oxidation process, the Si.sub.3N.sub.4 film is formed by a low pressure chemical vapor deposition process, and the second SiO.sub.2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.

A flexible circuit board and an electronic device including a flexible circuit board are provided. The flexible circuit board may include a substrate having a bending area and a non-bending area, a wiring pattern layer provided on the bending area and the non-bending area, a plating layer provided on the wiring pattern layer and including an open area in an area corresponding to the bending area, and a protective layer that directly contacts one surface of the wiring pattern layer exposed at the open area and a side surface of the plating layer. The protective layer may have a larger thickness than a thickness of the plating layer.

Semiconductor device assemblies are provided with a package substrate including one or more layers of thermally conductive material configured to conduct heat generated by one or more of semiconductor dies of the assemblies laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), via adhering a film comprising the layer of thermally conductive material to an outer surface of the package substrate, or via embedding a film comprising the layer of thermally conductive material to within the package substrate.

A waveguide package and a method for manufacturing the same are disclosed. The waveguide package includes a package structure including a waveguide opened toward one side surface of a substrate, a semiconductor chip mounted on one surface of the package structure and configured to output an electrical signal to the waveguide. Since an interior of the waveguide is filled with air, electrical loss of the waveguide is minimized The cavity is formed by processing the substrate made of photosensitive glass. Accordingly, the waveguide may be accurately formed. An electronic circuit may also be formed at the waveguide package. Accordingly, it may be possible to provide a waveguide package enhanced in degree of integration.

A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes: an interposer including a wiring structure and an interposer via electrically connected to the wiring structure; a plurality of semiconductor chips located on a first surface of the interposer and electrically connected to each other through the interposer; an encapsulant located on the first surface of the interposer and encapsulating at least a portion of the plurality of semiconductor chips; and a redistribution circuit structure located on a second surface of the interposer opposite to the first surface, wherein the plurality of semiconductor chips are electrically connected to the redistribution circuit structure through at least the interposer.

Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a redistribution substrate including dielectric and redistribution patterns, a first substrate pad on the redistribution substrate and penetrating the dielectric pattern to be coupled to the redistribution pattern, a second substrate pad the redistribution substrate and spaced apart from the first substrate pad, a semiconductor chip on the redistribution substrate, a first connection terminal connecting the first substrate pad to one of chip pads of the semiconductor chip, and a second connection terminal connecting the second substrate pad to another one of the chip pads of the semiconductor chip. A top surface of the second substrate pad is located at a higher level than that of a top surface of the first substrate pad. A width of the second substrate pad is less than that of the first substrate pad.

An integrated circuit assembly may be formed having a substrate core, wherein the substrate core includes at least one heat transfer fluid channel formed therein, a first build-up layer formed on a first surface of the substrate core, and a second build-up layer formed on a second surface of the substrate core, and methods of fabricating the same. In embodiments of the present description, the integrated circuit structure may include at least one integrated circuit device formed within at least one of the first build-up layer and the second build-up layer. The embodiments of the present description allow for cooling within the substrate, which may significantly reduce thermal damage to the components of the substrate and/or integrated circuit devices within the substrate.

A flexible circuit board and an electronic device including a flexible circuit board are provided. The flexible circuit board may include a substrate having a bending area and a non-bending area, a wiring pattern layer provided on the bending area and the non-bending area, a plating layer provided on the wiring pattern layer and including an open area in an area corresponding to the bending area, and a protective layer that directly contacts one surface of the wiring pattern layer exposed at the open area and a side surface of the plating layer. The protective layer may have a larger thickness than a thickness of the plating layer.

Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a redistribution substrate including dielectric and redistribution patterns, a first substrate pad on the redistribution substrate and penetrating the dielectric pattern to be coupled to the redistribution pattern, a second substrate pad the redistribution substrate and spaced apart from the first substrate pad, a semiconductor chip on the redistribution substrate, a first connection terminal connecting the first substrate pad to one of chip pads of the semiconductor chip, and a second connection terminal connecting the second substrate pad to another one of the chip pads of the semiconductor chip. A top surface of the second substrate pad is located at a higher level than that of a top surface of the first substrate pad. A width of the second substrate pad is less than that of the first substrate pad.