A wiring substrate includes a first wiring layer, an insulative resin first insulation layer covering the first wiring layer, and a second wiring layer located on an upper surface of the first insulation layer. A via wiring layer, which extends through the first insulation layer to connect the first and second wiring layers, includes an upper end surface connected to the second wiring layer and flush with the upper surface of the first insulation layer. The second wiring layer has a higher wiring density than the first wiring layer. The first insulation layer includes a first resin layer and a second resin layer located on an upper surface of the first resin layer and having a lower filler content rate than the first resin layer. The upper surface of the first resin layer is a curved surface upwardly curved toward the upper end surface of the via wiring layer.

A semiconductor device assembly includes a substrate and a first semiconductor device mounted to the substrate. An epoxy-based spacer is mounted to the substrate proximate to the first semiconductor device by an adhesive attached to a bottom surface of the epoxy-based spacer and to the substrate. A second semiconductor device is mounted directly to top surfaces of both the first semiconductor device and the epoxy-based spacer.

A method includes forming a first dielectric layer on a first wafer, and forming a first bond pad penetrating through the first dielectric layer. The first wafer includes a first semiconductor substrate, and the first bond pad is in contact with a first surface of the first semiconductor substrate. The method further includes forming a second dielectric layer on a second wafer and forming a second bond pad extending into the second dielectric layer. The second wafer includes a second semiconductor substrate. The first wafer is sawed into a plurality of dies, with the first bond pad being in a first die in the plurality of dies. The first bond pad is bonded to the second bond pad.

A circuit board is described which includes a layer composite with at least one dielectric layer which includes a planar extension in parallel with respect to an xy-plane which is spanned by an x-axis and a y-axis perpendicular thereto, and which includes a layer thickness along a z-axis which is perpendicular with respect to the x-axis and to the y-axis; and at least one metallic layer which is attached to the dielectric layer in a planar manner. The layer composite along the z-axis is free from a symmetry plane which is oriented in parallel with respect to the xy-plane, and the dielectric layer includes a dielectric material which has an elastic modulus E in a range between 1 and 20 GPa and along the x-axis and along the y-axis a coefficient of thermal expansion in a range between 0 and 17 ppm/K. A method of manufacturing such a circuit board is also described. Further, a method of manufacturing a circuit board structure comprising two asymmetric circuit boards and a method of manufacturing two processed asymmetric circuit boards from a larger circuit board structure is described.

A circuit board and a method of manufacturing a circuit board or two circuit boards are illustrated and described. The circuit board includes (a) a dielectric layer with a planar extension in parallel with respect to an xy-plane which is spanned by an x-axis and a y-axis perpendicular thereto and a layer thickness along a z-direction which is perpendicular with respect to the x-axis and to the y-axis; (b) a metallic layer which is attached to the dielectric layer in a planar manner; and (c) a component which is embedded in the dielectric layer and/or in a dielectric core-layer of the circuit board. The dielectric layer includes a dielectric material which has (i) an elastic modulus E in a range between 1 and 20 GPa and (ii) a coefficient of thermal expansion in a range between 0 and 17 ppm/K along the x-axis and along the y-axis.

A processing method of a flexible hybrid electronic system is provided and includes the following steps: etching out embedded grooves on a front surface of a silicon-based substrate embedding a plurality of heterogeneous chips into corresponding embedded grooves, wherein front surfaces of the embedded chips are flush with the front surface of the silicon-based substrate; then gradually realize the polymer flexible connection, electrical interconnection, insulation protection, and polymer flexible coverage between chips. The processing method processes the flexible hybrid electronic system based on the method of embedding chips, which can reduce material loss and processing steps, and is beneficial to realizing large-scale manufacturing.

An apparatus, comprising a substrate comprising a dielectric, a conductor, comprising a via embedded within the dielectric, the via has a first end and a second end, and substantially vertical sidewalls between the first end and the second end, and a conductive structure extending laterally from the first end of the via over the dielectric, wherein the via and the conductive structure have a contiguous microstructure.

Techniques that can assist with fabricating a package layer that includes a plurality of dual-damascene zero-misalignment-vias (dual-damascene ZMVs) and a trace between the dual-damascene ZMVs are described. The disclosed techniques allow for the dual-damascene ZMVs and their corresponding trace to be plated simultaneously in a single step or operation. As such, there is little or no misalignment between the dual-damascene ZMVs, the trace, and the metal pads connected to the ZMVs. In this way, one or more of the embodiments described herein can assist with reducing manufacturing costs, reducing development time of fabricating a package layer, and with increasing the I/O density in a semiconductor package.

Integrated circuit substrates having features for containing liquid adhesive, and methods for fabricating such substrates, are provided. A device can include a first substrate layer and a second substrate layer adhered to the first substrate layer such that a portion of the top surface of the first substrate layer is exposed to define a bottom of a cavity, and an edge of the second substrate layer adjacent to the exposed top surface of the first substrate layer defines an edge of the cavity. The device can include an integrated circuit die adhered to the exposed top surface of first substrate layer with a liquid adhesive. The first substrate layer can define a trench in the bottom of the cavity between a region of the integrated circuit die and the edge of the cavity such that the trench can receive bleed-out of the liquid adhesive from between the integrated circuit die and the top surface of the first substrate layer.

An interconnection structure is disclosed. The interconnection structure includes a base substrate, a set of conductive pads disposed on the base substrate and an interconnection layer disposed on the base substrate. The interconnection layer has an edge located next to the set of the conductive pads and includes a set of side connection pads located and disposed at the edge of the interconnection layer. Each side connection pad is arranged with respect to a corresponding one of the conductive pads disposed on the base substrate.