A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.

A heat dissipation device includes a base plate and a plurality of fins arranged on the base plate. Each fin includes a fin body including a first metal sheet and a second metal sheet coupled to each other, wherein the fin body is curved and includes a first portion and a second portion transverse to the first portion, an evaporation channel defined in the first portion, one or more connecting channels disposed in the first portion and in fluid communication with the evaporation channel, a condensation channel defined in the second portion, and one or more auxiliary channels disposed in the second portion and in fluid communication with the one or more connecting channels and the condensation channel.

Disclosed is a semiconductor article including: a metal bus bar and a metal heat sink wherein at least a portion of a first side of the metal bus bar is bonded to at least a portion of the metal heat sink by a polyimide layer without adhesive; and a semiconductor power device disposed on a second side of the metal bus bar.

An electronic component includes a first set comprising an interconnect layer and an electronic circuit having a front face and a back face, which is connected to the interconnect layer by the front face, wherein the first set comprises a metal plate having a front face and a back face joined to the back face of the electronic circuit; a coupling agent between the front face of the metal plate and the back face of the electronic circuit, configured to thermally and electrically connect the metal plate to the electronic circuit; and in that the electronic component comprises: one or more layers made of organic materials stacked around the first set and the metal plate using a printed circuit-type technique and encapsulating the electronic circuit; a thermally conductive metal surface arranged at least partially in contact with the back face of the metal plate.

An integrated circuit package may be formed having at least one heat dissipation structure within the integrated circuit package itself. In one embodiment, the integrated circuit package may include a substrate; at least one integrated circuit device, wherein the at least one integrated circuit device is electrically attached to the substrate; a mold material on the substrate and adjacent to the at least one integrated circuit device; and at least one heat dissipation structure contacting the at least one integrated circuit, wherein the at least one heat dissipation structure is embedded either within the mold material or between the mold material and the substrate.

Various embodiments of the teachings herein include a process for producing a cooling element. The method may include: providing a main element composed of a first material and having one or more cooling channels; applying a first layer of a second material to a surface of the one or more cooling channels; introducing a filler serving as support material for a second layer; applying the second layer of the second material, so that one or more closed channels made up of the first layer and the second layer are formed in the one or more cooling channels; and applying a covering layer to the one or more closed channels.

A method for efficient heat removal from a semiconducting device made from III-V semiconductor crystals includes depositing a diamond seeding layer on a patterned substrate.

One example of a semiconductor package includes a first substrate, a second substrate, a semiconductor die, and a spacer. The semiconductor die is attached to the first substrate. The spacer is attached to the semiconductor die and attached to the second substrate via solder. A surface of the second substrate facing the spacer includes a plurality of recesses extending from proximate at least one edge of the spacer to contain a portion of the solder.

A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.