A method of manufacturing a module is disclosed. In one example, the method comprises providing at least one solder body with a base portion and an elevated edge extending along at least part of a circumference of the base portion. At least one carrier, on which at least one electronic component is mounted, is placed in the at least one solder body so that the at least one carrier is positioned on the base portion and is spatially confined by the elevated edge.

A method for producing a bonded body includes: a laminating step of forming a laminated body in which a first member and a second member are temporarily bonded to each other by providing a temporary bonding material including an organic material on at least one of a bonding surface of the first member and a bonding surface of the second member; and a bonding step of pressurizing and heating the laminated body in a laminating direction and bonding the first member and the second member to each other. In the bonding step, during a temperature increase process of heating the laminated body up to a predetermined bonding temperature, at least a pressurization load P2 at a decomposition temperature T.sub.D of the organic material included in the temporary bonding material is lower than a pressurization load P1 at the bonding temperature.

The present invention relates to a power module and a method for manufacturing same, in which an insulating spacer is disposed between two upper and lower substrates to thus efficiently dissipate the heat generated from a semiconductor chip mounted between the substrates, and prevent bending deformation due to heat. In addition, since the spacer made of an insulating material is integrated with the substrates by brazing bonding, the bonding strength is improved, thereby maintaining strong bonding even against vibration, etc.

A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming a plurality of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing a first etch step; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth metal layer above; forming a connection to the second metal layer which includes a via through the second level; forming a fifth metal layer above, where some second transistors include a metal gate, and the fifth metal layer thickness is at least 50% greater than the second metal layer thickness.

An insulated circuit substrate manufacturing method of the present invention includes a metal piece disposing step of disposing the metal piece in a circuit pattern shape on a resin material serving as the insulating resin layer and a bonding step of bonding the insulating resin layer and the metal piece by pressurizing and heating the resin material and the metal piece at least in a laminating direction. In the bonding step, the metal piece and the resin material are pressurized in the laminating direction by a pressurizing jig that includes a cushion material disposed on a side of the metal piece and a guide wall portion disposed at a position facing a peripheral portion of the cushion material, and the peripheral portion of the cushion material is brought into contact with the guide wall portion during pressurization.

A semiconductor package module includes a package, a conductive layer, and a heat dissipating module. The package includes a semiconductor die. The conductive layer is disposed over the package. The heat dissipating module is disposed over the conductive layer, and the package and the heat dissipating module prop against two opposite sides of the conductive layer, where the heat dissipating module is thermally coupled to and electrically isolated from the package through the conductive layer.

A miniaturized and high-power semiconductor package device with its own heat-dissipating ability includes a thermal conductor, a redistribution layer, an electronic device, a molding layer, and a solder ball. The redistribution layer includes a first surface defining an opening, a second surface opposite to the first surface, and a circuit layer. The thermal conductor is disposed in the opening. The electronic device is disposed on the first surface of the redistribution layer above the thermal conductor. The molding layer is formed on the first surface and surrounding the electronic device. The solder balls are disposed on the second surface of the redistribution layer and can form electrical connections to the circuit layer.

A manufacturing method of an integrated circuit (IC) packaging structure includes the following steps. One or a plurality of dies is disposed on a packaging substrate. An encapsulation material is formed on the packaging substrate. The encapsulation material is configured to encapsulate the one or the plurality of the dies on the packaging substrate. At least one trench is formed in the encapsulation material. A heat dissipation structure is formed on the encapsulation material, and at least a part of the heat dissipation structure is formed in the at least one trench. The step of forming the heat dissipation structure includes the following steps. A first slurry is formed in the at least one trench, and a first curing process is performed to the first slurry for forming a first portion of the heat dissipation structure.

A system includes at least one component configured to generate thermal energy, a heat spreader configured to remove thermal energy from the at least one component, and at least one substrate configured to remove thermal energy from the heat spreader. The heat spreader includes a first portion and a second portion. The first portion of the heat spreader is coupled to the substrate, and the second portion of the heat spreader is coupled to the at least one component. The first portion of the heat spreader includes high aspect-ratio structures that are separated from one another. The high aspect-ratio structures cause the first portion of the heat spreader to be pliable and able to accommodate a mismatch in coefficients of thermal expansion between a material in the heat spreader and a material in the substrate.

A method includes providing a first metal sheet and a second metal sheet, printing a plurality of channels on the first metal sheet, bonding the first metal sheet and the second metal sheet to each other to obtain a fin body, bending a first portion of the fin body to be transverse to a second portion of the fin body, separating the first metal sheet and the second metal sheet from each other to form the plurality of channels, introducing working fluid in the plurality of channels, and sealing the first metal sheet and the second metal sheet.