An electromagnetic shielding element and, transmission line assembly and electronic structure package using the same are provided. The electromagnetic shielding element is applied to the transmission line assembly and the electronic structure package to shield electromagnetic noise. The electromagnetic shielding element includes a quantum well structure, and the quantum well structure includes at least two barrier layers and at least one carrier confined layer located between the two barrier layers. Each barrier layer has a thickness between 0.1 nm and 500 nm, and the thickness of the carrier confined layer is between 0.1 nm and 500 nm. The electromagnetic shielding element absorbs electromagnetic wave noise to suppress electromagnetic interference.

A semiconductor package is fabricated by attaching a first component to a second component. The first component is assembled by forming a first redistribution structure over a substrate. A through via is then formed over the first redistribution structure, and a die is attached to the first redistribution structure active-side down. The second component includes a second redistribution structure, which is then attached to the through via. A molding compound is deposited between the first redistribution structure and the second redistribution structure and further around the sides of the second component.

An additional set of interconnects is created in bulk material, allowing connections to active devices to be made from both above and below. The interconnects below the active devices can form a power distribution network, and the interconnects above the active devices can form a signaling network. Various accommodations can be made to suit different applications, such as encapsulating buried elements, using sacrificial material, and replacing the bulk material with a dielectric. Epitaxial material can be used throughout the formation process, allowing for the creation of a monolithic substrate.

A semiconductor package is fabricated by attaching a first component to a second component. The first component is assembled by forming a first redistribution structure over a substrate. A through via is then formed over the first redistribution structure, and a die is attached to the first redistribution structure active-side down. The second component includes a second redistribution structure, which is then attached to the through via. A molding compound is deposited between the first redistribution structure and the second redistribution structure and further around the sides of the second component.

A semiconductor package includes a substrate, a set of terminals protruding from a first surface of the substrate, a power stage physically and thermally coupled to the first surface of the substrate, and a flexible circuit including at least one circuit layer forming power stage conductors and control circuit conductors disposed on a flexible insulating substrate layer. The power stage is between the flexible circuit and the substrate and is mounted on a first surface of the flexible circuit such that the power stage is electrically connected to the power stage conductors. The package includes a die mounted on a second surface of the flexible circuit opposite the power stage. An output of the die is electrically connected to an input of the power stage via the control circuit conductors.

A semiconductor package includes a substrate, a set of terminals protruding from a first surface of the substrate, a power stage physically and thermally coupled to the first surface of the substrate, and a flexible circuit including at least one circuit layer forming power stage conductors and control circuit conductors disposed on a flexible insulating substrate layer. The power stage is between the flexible circuit and the substrate and is mounted on a first surface of the flexible circuit such that the power stage is electrically connected to the power stage conductors. The package includes a die mounted on a second surface of the flexible circuit opposite the power stage. An output of the die is electrically connected to an input of the power stage via the control circuit conductors.

A semiconductor package is fabricated by attaching a first component to a second component. The first component is assembled by forming a first redistribution structure over a substrate. A through via is then formed over the first redistribution structure, and a die is attached to the first redistribution structure active-side down. The second component includes a second redistribution structure, which is then attached to the through via. A molding compound is deposited between the first redistribution structure and the second redistribution structure and further around the sides of the second component.

A package that includes a substrate, an integrated device coupled to the substrate, an encapsulation layer located over the substrate, at least one encapsulation layer interconnect located in the encapsulation layer, and a metal layer located over the encapsulation layer. The substrate includes at least one dielectric layer and a plurality of interconnects. The encapsulation layer interconnect is coupled to the substrate. The metal layer is configured as an electromagnetic interference (EMI) shield for the package. The metal layer is located over a backside of the integrated device.

A semiconductor module is provided, including: a semiconductor chip having an upper surface electrode and a lower surface electrode opposite to the upper surface electrode; a metal wiring plate electrically connected to the upper surface electrode of the semiconductor chip; and a sheet-like low elastic sheet provided on the metal wiring plate, the low elastic sheet having elastic modulus lower than that of the metal wiring plate. A manufacturing method for a semiconductor module is provided, including: providing a semiconductor chip; solder-bonding a metal wiring plate above said semiconductor chip; and applying a sheet-like low elastic sheet having the elastic modulus lower than that of said metal wiring plate to said metal wiring plate.

A semiconductor package is fabricated by attaching a first component to a second component. The first component is assembled by forming a first redistribution structure over a substrate. A through via is then formed over the first redistribution structure, and a die is attached to the first redistribution structure active-side down. The second component includes a second redistribution structure, which is then attached to the through via. A molding compound is deposited between the first redistribution structure and the second redistribution structure and further around the sides of the second component.