A semiconductor device assembly includes a first remote distribution layer (RDL), the first RDL comprising a lower outermost planar surface of the semiconductor device assembly; a first semiconductor die directly coupled to an upper surface of the first RDL by a first plurality of interconnects; a second RDL, the second RDL comprising an upper outermost planar surface of the semiconductor device assembly opposite the lower outermost planar surface; a second semiconductor die directly coupled to a lower surface of the second RDL by a second plurality of interconnects; an encapsulant material disposed between the first RDL and the second RDL and at least partially encapsulating the first and second semiconductor dies; and a third plurality of interconnects extending fully between and directly coupling the upper surface of the first RDL and the lower surface of the second RDL.

A semiconductor structure includes a fan-out package, a packaging substrate, an solder material portions bonded to the fan-out package and the packaging substrate, an underfill material portion laterally surrounding the solder material portions, and at least one cushioning film located on the packaging substrate and contacting the underfill material portion and having a Young's modulus is lower than a Young's modulus of the underfill material portion.

A semiconductor package includes a wiring structure that includes a first insulating layer and a first conductive pattern inside the first insulating layer, a first semiconductor chip disposed on the wiring structure, an interposer that includes a second insulating layer, a second conductive pattern inside the second insulating layer, and a recess that includes a first sidewall formed on a first surface of the interposer that faces the first semiconductor chip and a first bottom surface connected with the first sidewall, where the recess exposes at least a portion of the second insulating layer, a first element bonded to the interposer and that faces the first semiconductor chip inside the recess, and a mold layer that covers the first semiconductor chip and the first element.

A semiconductor package including a first substrate including a first bump pad and a filling compensation film (FCF) around the first bump pad; a second substrate facing the first substrate and including a second bump pad; a bump structure (BS) in contact with the first bump pad and the second bump pad; and a non-conductive film (NCF) surrounding the BS and between the first substrate and the second substrate, wherein the NCF covers an upper surface and an edge of the FCF.

Semiconductor three-dimensional integrated circuit packages and methods of forming the same are disclosed herein. A method includes bonding a semiconductor chip package to a substrate and depositing a thermal interface material on the semiconductor chip package. A thermal lid may be placed over and adhered to the semiconductor chip package by the thermal interface material. The thermal lid includes a wedge feature interfacing the thermal interface material. The thermal lid may be adhered to the semiconductor chip package by curing the thermal interface material.

A package includes an integrated circuit. The integrated circuit includes a first chip, a second chip, a third chip, and a fourth chip. The second chip and the third chip are disposed side by side on the first chip. The second chip and the third chip are hybrid bonded to the first chip. The fourth chip is fusion bonded to at least one of the second chip and the third chip.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

A chip package structure includes at least one chip, at least one thermally conductive element, a molding compound, and a redistribution layer. The respective chip has an active surface and a back surface opposite to each other and a plurality of electrodes disposed on the active surface. The thermally conductive element is disposed on the back surface of the respective chip. The molding compound encapsulates the chip and the thermally conductive element and has an upper surface and a lower surface opposite to each other. A bottom surface of each of the electrodes of the respective chip is aligned with the lower surface of the molding compound. The molding compound exposes a top surface of the respective thermally conductive element. The redistribution layer is disposed on the lower surface of the molding compound and electrically connected to the electrodes of the respective chip.

A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.

A semiconductor package device includes a first semiconductor package, a second semiconductor package, and first connection terminals between the first and second semiconductor packages. The first semiconductor package includes a lower redistribution substrate, a semiconductor chip, and an upper redistribution substrate vertically spaced apart from the lower redistribution substrate across the semiconductor chip. The upper redistribution substrate includes a dielectric layer, redistribution patterns vertically stacked in the dielectric layer and each including line and via parts, and bonding pads on uppermost redistribution patterns. The bonding pads are exposed from the dielectric layer and in contact with the first connection terminals. A diameter of each bonding pad decreases in a first direction from a central portion at a top surface of the upper redistribution substrate to an outer portion at the top surface thereof. A thickness of each bonding pad increases in the first direction.