A packaging fill material for electrical packaging includes a base material, and a plurality of frangible capsules distributed in the base material. Each frangible capsule includes a liquid penetrant contrast agent therein having a different radiopacity than the base material. In response to a crack forming in the packaging fill material, at least one of the plurality of frangible capsules opens, releasing the liquid penetrant contrast agent into the crack. Cracks can be more readily identified in an IC package including the packaging fill material. The liquid penetrant contrast agent may have a radiopacity that is higher than the base material. Inspection can be carried out using electromagnetic analysis using visual inspection or digital analysis of the results to more easily identify cracks.

Embodiments described herein may be related to apparatuses, processes, and techniques related to multilevel dies, in particular to photonics integrated circuit dies with a thick portion and a thin portion, where the thick portion is placed within a cavity in a substrate and the thin portion serves as an overhang to physically couple with the substrate, to reduce a distance between electrical contacts on the thin portion of the die and electrical contacts on the substrate. Other embodiments may be described and/or claimed.

A semiconductor package includes a package substrate with a first vent hole, a first semiconductor chip mounted the package substrate, an interposer including supporters on a bottom surface of the interposer and a second vent hole, wherein the supporters contact a top surface of the first semiconductor chip, and the interposer is electrically connected to the package substrate through connection terminals. The semiconductor package further include a second semiconductor chip mounted on the interposer, and a molding layer disposed on the package substrate to cover the first semiconductor chip, the interposer, and the second semiconductor chip.

In a described example, a packaged device includes a substrate having a device mounting surface including a first layer of conductive material having a first thickness less than a substrate thickness, the substrate having a second layer of the conductive material having a second thickness less than the substrate thickness. A first semiconductor device is mounted to a first area of the device mounting surface; and a second semiconductor device is mounted to a second area on the device mounting surface and spaced from the first semiconductor device. At least two connectors are formed of the first layer of the substrate having first ends coupled to one of first bond pads on the first semiconductor device and the at least two connectors having second ends coupled to one of second bond pads on the second semiconductor device.

Structures and formation methods of a chip package structure are provided. The chip package structure includes adjacent first and second semiconductor dies bonded over an interposer substrate. The chip package structure also includes an insulating layer formed over the interposer substrate. The insulating layer has a first portion surrounding the first and second semiconductor dies and a second portion extending between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, and between the interposer substrate and the first and second semiconductor dies. The lateral distance from the top end of the first sidewall to the top end of the second sidewall is greater than the lateral distance from the bottom end of the first sidewall to the bottom end of the second sidewall.

A package structure is provided. The package structure includes a redistribution structure and a semiconductor die over the redistribution structure, and bonding elements below the redistribution structure. The semiconductor die has a first sidewall and a second sidewall connected to each other. The bonding elements include a first row of bonding elements and a second row of bonding elements. In a plan view, the second row of bonding elements is arranged between the first row of bonding elements and an extending line of the second sidewall. A minimum distance between the second row of bonding elements and the first sidewall is greater than the minimum distance between the first row of bonding elements and the first sidewall.

A package structure is provided. The package structure includes a first conductive pad in an insulating layer, a first under bump metallurgy structure under the first insulating layer, and a first conductive via in the insulating layer. The first conductive via is vertically connected to the first conductive pad and the first under bump metallurgy structure. In a plan view, a first area of the first under bump metallurgy structure is confined within a second area of the first conductive pad.

A package structure is provided. The package structure includes a redistribution structure and a first semiconductor die over the redistribution structure. The package structure also includes a wall structure laterally surrounding the first semiconductor die and the wall structure includes a plurality of partitions separated from one another. The package structure also includes an underfill material between the wall structure and the first semiconductor die. The package structure also includes a molding compound encapsulating the wall structure and the underfill material.

A chip package structure includes at least one semiconductor die attached to a redistribution structure, a first underfill material portion located between the redistribution structure and the at least one semiconductor die and laterally surrounding the solder material portions, a molding compound laterally surrounding at least one semiconductor die, and a second underfill material portion contacting sidewalls of the redistribution structure and sidewalls of the molding compound and including at least one cut region. The second underfill material portion includes a vertically-extending portion having a uniform lateral width and a horizontally-extending portion having a uniform vertical thickness and adjoined to a bottom end of the vertically-extending portion within each of the at least one cut region.

A semiconductor package includes: a package substrate; a semiconductor chip mounted above the package substrate; a chip connection terminal interposed between the semiconductor chip and the package substrate; an adhesive layer disposed on the package substrate and that covers a side and a top surface of the semiconductor chip and surrounds the chip connection terminal between the semiconductor chip and the package substrate; a molding layer disposed on the package substrate and that surrounds the adhesive layer; an interposer mounted on the adhesive layer and the molding layer, where the interposer includes an interposer substrate; and a conductive pillar disposed on the package substrate, where the conductive pillar surrounds the side of the semiconductor substrate, penetrates the molding layer in a vertical direction and connects the package substrate to the interposer substrate.