A method for contacting and rewiring an electronic component embedded in a PCB in the following manner is disclosed. A first permanent resist layer is applied to one contact side of the PCB. The first permanent resist layer is structured to produce exposures in the area of contacts of the electronic component. A second permanent resist layer is applied onto the structured first permanent resist layer. The second permanent resist layer is structured to expose the exposures in the area of the contacts and to produce exposures in line with the desired conductor tracks. The exposures are chemically coated with copper the copper is electric-plated to the exposures. Excess copper in the areas between the exposures is removed.

Various embodiments may provide a semiconductor package. The semiconductor package may include a semiconductor chip, a first mold compound layer at least partially covering the semiconductor chip, and a redistribution layer over the first mold compound layer, the redistribution layer including one or more electrically conductive lines in electrical connection with the semiconductor chip. The semiconductor package may additionally include a second mold compound layer over the redistribution layer, and an antenna array over the second mold compound layer, the antenna array configured to be coupled to the one or more electrically conductive lines.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising multiple encapsulating layers and multiple signal distribution structures, and a method of manufacturing thereof.

A semiconductor package can include a semiconductor die stack including a top die and one or more core dies below the top die. The semiconductor package can further include a metal heat sink plated on a top surface of the top die and have a plurality of side surfaces coplanar with corresponding ones of a plurality of sidewalls of the semiconductor die stack. A molding can surround the stack of semiconductor dies and the metal heat sink, the molding including a top surface coplanar with an exposed upper surface of the metal heat sink. The top surface of the molding and the exposed upper surface of the metal heat sink are both mechanically altered. For example, the metal heat sink and the molding can be simultaneously ground with a grinding disc and can show grinding marks as a result.

Embodiments described herein provide techniques for using a stress absorption material to improve solder joint reliability in semiconductor packages and packaged systems. One technique produces a semiconductor package that includes a die on a substrate, where the die has a first surface, a second surface opposite the first surface, and a sidewall surface coupling the first surface to the second surface. The semiconductor package further includes a stress absorption material contacting the sidewall surface of the die and a molding compound separated from the sidewall surface of the die by the stress absorption material. The Young's modulus of the stress absorption material is lower than the Young's modulus of the molding compound. One example of a stress absorption material is a photoresist.

A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

A method of temporary bonding of an object having first and second opposite surfaces successively including bonding the object to a handle on the side of the first surface, bonding the object to a first adhesive film on the side of the second surface, bonding the first adhesive film to a second adhesive film on the side opposite to the object, and removing the handle from the object.

A semiconductor packaging structure manufactured in a manner which does not leave the chip damaged or susceptible to damage upon the removal of temporary manufacturing supports includes at least one electrical conductor, at least one conductive layer, a chip, and a colloid. The chip is spaced from the conductive layer, the electrical conductor is disposed between the conductive layer and the chip and electrically connects the conductive layer to the chip. The colloid covers all outer surfaces of the chip. A method of fabricating such a semiconductor packaging structure is also provided.

A package structure and a formation method of a package structure are provided. The method includes forming a conductive structure over a carrier substrate. The conductive structure has a lower portion and an upper portion, and the upper portion is wider than the lower portion. The method also includes disposing a semiconductor die over the carrier substrate. The method further includes forming a protective layer to surround the conductive structure and the semiconductor die. In addition, the method includes forming a conductive bump over the conductive structure. The lower portion of the conductive structure is between the conductive bump and the upper portion of the conductive structure.

A semiconductor package includes a semiconductor chip; a redistribution insulating layer including a first opening; an external connection bump including a first part in the first opening; a lower bump pad including a first surface in physical contact with the first part of the external connection bump and a second surface opposite to the first surface, wherein the first surface and the redistribution insulating layer partially overlap; and a redistribution pattern that electrically connects the lower bump pad to the semiconductor chip.