Patent classifications
H01L2021/60292
LASER BEAM SHAPING FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
Approaches for foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves locating a metal foil above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate. The method also involves laser welding the metal foil to the alternating N-type and P-type semiconductor regions. The method also involves patterning the metal foil by laser ablating through at least a portion of the metal foil at regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The laser welding and the patterning are performed at the same time.
SYSTEMS AND METHODS FOR WAFER BOND MONITORING
Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.
Chip to chip interconnect in encapsulant of molded semiconductor package
A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.
ELECTRONIC PACKAGE WITH HEATSINK AND MANUFACTURING METHOD THEREFOR
An electronic package and a method for manufacturing the same is provided. The electronic package includes a first substrate, an electronic component arranged on and/or formed in the first substrate, a thermally conductive second substrate including a first portion and a second portion integrally connected to the first portion, and at least the first portion among the first and second portion is fixedly attached to the electronic component, and a package material arranged to encapsulate the electronic component and to at least partially encapsulate the first and second substrate, and the package material includes a recess formed therein that extends up to a surface of the first portion.
SYSTEMS AND METHODS FOR WAFER BOND MONITORING
Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.
LASER BONDING APPARATUS FOR THREE-DIMENSIONAL STRUCTURES
Disclosed are a laser bonding apparatus and a laser bonding method capable of bonding an electronic component to a three-dimensional structure having a regular or irregular shape in a curved portion such as an automobile tail lamp or a headlamp. The laser bonding apparatus and method for a three-dimensional structure may prevent misalignment and poor bonding of the electronic component with respect to the three-dimensional structure.
Chip to Chip Interconnect in Encapsulant of Molded Semiconductor Package
A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.
Laser bonding apparatus for three-dimensional molded sculptures
Disclosed are a laser bonding apparatus and a laser bonding method capable of bonding an electronic component to a three-dimensional structure having a regular or irregular shape in a curved portion such as an automobile tail lamp or a headlamp. The laser bonding apparatus and method for a three-dimensional structure may prevent misalignment and poor bonding of the electronic component with respect to the three-dimensional structure.
Mask Changing Unit for Laser Bonding Apparatus
Provided is a mask changing unit for a laser bonding apparatus, and more particularly, a mask changing unit for a laser bonding apparatus, wherein the mask changing unit supplies or changes a mask to or in the laser bonding apparatus for bonding a semiconductor chip to a substrate by using a laser beam.
According to the mask changing unit for a laser bonding apparatus, a plurality of masks that are used in performing laser bonding of a semiconductor chip to a substrate while the semiconductor chip is being pressed may be easily supplied to the laser bonding apparatus or changed in the laser bonding apparatus.
LASER BEAM SHAPING FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
Approaches for foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves locating a metal foil above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate. The method also involves laser welding the metal foil to the alternating N-type and P-type semiconductor regions. The method also involves patterning the metal foil by laser ablating through at least a portion of the metal foil at regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The laser welding and the patterning are performed at the same time.