A semiconductor device includes a substrate, a first adhesive layer, a first semiconductor chip, and a second adhesive layer. The first adhesive layer is provided above a first surface of the substrate and includes a plurality of types of resins having different molecular weights and a filler. The first semiconductor chip is provided above the first adhesive layer. The second adhesive layer is provided in at least a part of a first region between the substrate and the first adhesive layer, and the second adhesive layer includes at least one type of resins among the plurality of types of resins having a molecular weight smaller than a molecular weight of other types of resins among the plurality of types of resins, and a filler having a lower concentration than that of the first adhesive layer.

A semiconductor device includes a substrate, a first adhesive layer, a first semiconductor chip, and a second adhesive layer. The first adhesive layer is provided above a first surface of the substrate and includes a plurality of types of resins having different molecular weights and a filler. The first semiconductor chip is provided above the first adhesive layer. The second adhesive layer is provided in at least a part of a first region between the substrate and the first adhesive layer, and the second adhesive layer includes at least one type of resins among the plurality of types of resins having a molecular weight smaller than a molecular weight of other types of resins among the plurality of types of resins, and a filler having a lower concentration than that of the first adhesive layer.

An apparatus includes a nozzle including a small die vacuum line disposed on a surface of the nozzle, and a large die vacuum line disposed on the surface and surrounding the small die vacuum line. The nozzle further includes a first die vacuum hole disposed through the surface and the small die vacuum line, and a second die vacuum hole disposed through the surface and the large die vacuum line. The small die vacuum line and the first die vacuum hole are configured to provide a vacuum to a small semiconductor die to be attached to a substrate, and the small die vacuum line, the large die vacuum line, the first die vacuum hole and the second die vacuum hole are configured to provide the vacuum to a large semiconductor die to be attached to the substrate.

An apparatus includes a nozzle including a small die vacuum line disposed on a surface of the nozzle, and a large die vacuum line disposed on the surface and surrounding the small die vacuum line. The nozzle further includes a first die vacuum hole disposed through the surface and the small die vacuum line, and a second die vacuum hole disposed through the surface and the large die vacuum line. The small die vacuum line and the first die vacuum hole are configured to provide a vacuum to a small semiconductor die to be attached to a substrate, and the small die vacuum line, the large die vacuum line, the first die vacuum hole and the second die vacuum hole are configured to provide the vacuum to a large semiconductor die to be attached to the substrate.

A joined body production method includes subjecting a first electronic component and a second electronic component to thermocompression bonding via a hot-melt adhesive sheet. The hot-melt adhesive sheet includes a binder and solder particles. The binder includes a crystalline polyamide resin having a carboxyl group. A melting point of the solder particles is 30 C. to 0 C. lower than a temperature of the thermocompression bonding. When melt viscosities of the hot-melt adhesive sheet are measured under a condition of a heating rate of 5 C./min., the hot-melt adhesive sheet has a ratio of a melt viscosity at 40 C. lower than the temperature of the thermocompression bonding to a melt viscosity at 20 C. lower than the temperature of the thermocompression bonding of no less than 10.

A method for producing an SMD power semiconductor component module includes providing an SMD circuit carrier equipped with contact points and an insulation, and at least one discrete power semiconductor component equipped with electrically conductive connection elements, preferably connection legs. The at least one discrete power semiconductor component, equipped with electrically conductive connection elements, is arranged on the side of the SMD circuit carrier equipped with the contact points. The connection elements of the power semiconductor component contact the contact points of the SMD circuit carrier, and the connection elements are connected to the respectively assigned contact points by laser welding.

A semiconductor package can include a semiconductor die stack including a top die and one or more core dies below the top die. The semiconductor package can further include a metal heat sink plated on a top surface of the top die and have a plurality of side surfaces coplanar with corresponding ones of a plurality of sidewalls of the semiconductor die stack. A molding can surround the stack of semiconductor dies and the metal heat sink, the molding including a top surface coplanar with an exposed upper surface of the metal heat sink. The top surface of the molding and the exposed upper surface of the metal heat sink are both mechanically altered. For example, the metal heat sink and the molding can be simultaneously ground with a grinding disc and can show grinding marks as a result.

A method of applying a sinterable film to a substrate during a surface mount technology (SMT) process comprises: providing a substrate; providing a preform comprising a support film, the support film having a first surface and a second surface opposite the first surface, the support film being laminated with a sinterable film of metal particles (e.g., Ag, Ag alloy, Au, Au alloy, Cu, Cu alloy, Rd, Rd alloy, Ni, Ni alloy, Al, Al alloy, Ag-coated Cu, Cu-coated Ag) on the first surface but not on the second surface; providing a pick-and-place machine comprising a placement head; picking up the preform via the second surface using the placement head of the pick-and-place machine; placing the preform in contact with the substrate using the pick-and-place machine, wherein the contact is via the sinterable film; attaching the sinterable film to the substrate; and separating the support film from the sinterable film. The placement head may comprise a vacuum nozzle, wherein picking up the preform via the support film comprises applying a vacuum to the second surface using the vacuum nozzle. Separating the support film from the sinterable film may be carried out by moving the placement head of the pick-and-place machine away from the support film while maintaining the vacuum. The support film may be discarded from the pick-and-place machine by removing the vacuum. The support film may be used to manufacture a further preform.