An object of the invention is to provide: a manufacturing method for a highly reliable power semiconductor device which prevents breakage of an conductor pattern and an insulating layer, and has bonding strength higher than that by the conventional bonding between the electrode terminal and the conductor pattern; and that power semiconductor device. Breakage of the conductor pattern and the insulating layer is prevented due to inclusion of: a step of laying an electrode terminal on a protrusion provided on a conductor pattern placed on a circuit-face side of a ceramic board so that a center portion of a surface to be bonded of the electrode terminal makes contact with a head portion of the protrusion; a step of pressurizing and ultrasonically vibrating a surface opposite to the surface to be bonded, of the electrode terminal, using an ultrasonic horn, to thereby bond the electrode terminal to the conductor pattern.

A bonding tool that executes an ultrasonic vibration processing of applying ultrasonic vibration to an application portion on a lead wire from a direct contact tip portion and a pair of press mechanisms having a pair of press rollers capable of performing a rotational operation. The pair of press mechanisms executes a press processing of pressing both sides of the application portion on the lead wire by the pair of press rollers at a time of execution of the ultrasonic vibration processing by the bonding tool and a movement processing of executing a rotational operation performed by the pair of press rollers to move the pair of press rollers on the lead wire while pressing the lead wire at a time of non-execution of the ultrasonic vibration processing.

Embodiments herein relate to methods and apparatus to achieve substantially uniform package thickness after forming a buildup layer on a package substrate of an integrated circuit. Some embodiments include applying a resin to the buildup layer to form a resin layer on top of at least a portion of the buildup layer and substantially evening out the surface formed by the resin layer. Some embodiments include vibrating a hot press onto the top surface of the buildup layer and vibrating the hot press in an ultrasonic and/or a scrubbing motion. Other embodiments may be described and/or claimed.

A power semiconductor module includes: a first substrate; a first power semiconductor die attached to the first substrate; and a first metallic clip having a plurality of first contact regions ultrasonically welded to either a first metallic region of the first substrate or a first metallic region of the first power semiconductor die. The first contact regions of the first metallic clip are laterally separated from one another by a first gap in the first metallic clip. Additional power semiconductor module embodiments and corresponding methods of production are also described herein.

A power semiconductor module includes: a first substrate; a first power semiconductor die attached to the first substrate; and a first metallic clip having a plurality of first contact regions ultrasonically welded to either a first metallic region of the first substrate or a first metallic region of the first power semiconductor die. The first contact regions of the first metallic clip are laterally separated from one another by a first gap in the first metallic clip. Additional power semiconductor module embodiments and corresponding methods of production are also described herein.

An article includes a body and an ultrasonic bonded layer deposited on the body. The ultrasonic bonded layer includes a first layer of a first material. The first material includes a metal or metal alloy, The ultrasonic bonded layer further includes a second layer of a second material bonded to the first layer. The second material includes a metal matrix composite material.

An article includes a body and an ultrasonic bonded layer deposited on the body. The ultrasonic bonded layer includes a first layer of a first material. The first material includes a metal or metal alloy, The ultrasonic bonded layer further includes a second layer of a second material bonded to the first layer. The second material includes a metal matrix composite material.