A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.

The collapsed pattern recovering method is a method for recovering a collapsed pattern which is a pattern formed on a front surface of a substrate, and the method includes a reactive gas supplying step which supplies to the front surface of the substrate a reactive gas that can react with a product existing on the front surface. The reactive gas supplying step includes a hydrogen fluoride vapor supplying step which supplies vapor that contains hydrogen fluoride to the front surface of the substrate. The collapsed pattern recovering method further includes a substrate heating step which heats the substrate in parallel with the hydrogen fluoride vapor supplying step.

A transfer path is provided which is extended so as to be passed on a lateral side of a processing portion that processes a substrate. The substrate transferred between a container held by a holding unit and the processing portion passes through the transfer path. A first transfer robot carries the substrate into and out of the container held by the holding unit, and accesses a reception/delivery region arranged within the transfer path. A second transfer robot receives and delivers the substrate from and to the first transfer robot in the reception/delivery region, and carries the substrate into and out of the processing portion. A second transfer robot raising/lowering unit which raises and lowers the second transfer robot is arranged within the transfer path. The reception/delivery region and the second transfer robot raising/lowering unit are located between the first transfer robot and the second transfer robot.

Disclosed herein is an apparatus and method for annealing semiconductor substrates. In one example a temperature-controlled fluid circuit includes a condenser configured to fluidly connect to an internal volume of a processing chamber. The processing chamber has a body, the internal volume is within the body. The condenser is configured to condense a processing fluid into liquid phase. A source conduit includes a first terminal end that couples to a first port on the body of the processing chamber. The source conduit includes a second terminal end. The first terminal end couples to a gas panel. The gas panel is configured to provide a processing fluid into the internal volume of the processing chamber. A gas conduit includes a first end. The first end couples to the condenser and a second end. The second end is configured to couple to a second port on the body of the processing chamber.

A solution supply apparatus is for supplying a treatment solution to a treatment solution discharger which discharges the treatment solution to a treatment object. The solution supply apparatus includes: a supply pipe line connected to the treatment solution discharger; a filter provided on the supply pipe line which filters the treatment solution to remove foreign substances; and a controller. The controller performs a determination of a state of the treatment solution to be supplied to a primary side of the filter and, when the state of the treatment solution is determined to be bad, outputs a control signal for restricting supply of the treatment solution to the primary side of the filter.

A substrate processing apparatus includes a pair of first substrate chucks each configured to hold a substrate from below while allowing a first main surface of the substrate to face upwards; a pair of second substrate chucks each configured to hold the substrate from below while allowing a second main surface of the substrate opposite to the first main surface to face upwards; a rotary table which is configured to be rotated about a rotation axis; a first processing unit equipped with a first processing tool configured to process the first main surface of the substrate held by the first substrate chuck; and a second processing unit equipped with a second processing tool configured to process the second main surface of the substrate held by the second substrate chuck.

A substrate processing apparatus includes: a substrate holder configured to hold a substrate; a processing liquid supply part configured to supply a processing liquid to the substrate held by the substrate holder; a chemical liquid supply part configured to supply a chemical liquid as a component of the processing liquid to the processing liquid supply part; a pure water supply part configured to supply pure water as a component of the processing liquid to the processing liquid supply part; a low-dielectric constant solvent supply part configured to supply a low-dielectric constant solvent as a component of the processing liquid to the processing liquid supply part; and a controller configured to control a ratio of the chemical liquid, the pure water, and the low-dielectric constant solvent contained in the processing liquid by controlling the chemical liquid supply part, the pure water supply part, the low-dielectric constant solvent supply part.

A substrate treating apparatus includes a treating housing and a gas supply unit. The treating housing treats substrates in the interior thereof. The gas supply unit supplies a gas to the interior of the treating housing. The gas supply unit has a filter, a duct, and a fan. The filter is located in an upper part of the treating housing. The filter blows off the gas to the interior of the treating housing. The duct is provided in the exterior of the treating housing. The duct is connected to the filter. The fan is provided in the exterior of the treating housing. The fan is connected to the duct. The fan is located in a position not overlapping the filter in plan view. At least part of the fan is located in the same height position as the treating housing.

A semiconductor processing apparatus is provided. The apparatus includes a body portion, which includes at least one semiconductor processing unit. Each semiconductor processing unit includes a recess formed on an upper surface of the body portion, wherein a bottom surface of the recess has at least one location and a peripheral. The bottom surface ascends from the at least one location toward the peripheral against a direction of gravity or descends from the at least one location toward the peripheral following the direction of gravity. Each semiconductor processing unit also includes a first channel that connects to the recess at the at least one location, as well as at least one second channel connecting to the recess at the peripheral. Each of the first channel and the at least one second channel serves as an inlet or an outlet via which a fluid enters or exits the recess. A method according to the present disclosure may control a flowing direction of a fluid flowing across a substrate surface. When the fluid flow as programmed, the fluid may contact the substrate surface and process the surface via various physical and/or chemical reactions.

Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.