The substrate processing apparatus includes: a nozzle having a spout and adapted to spout SPM from the spout toward a substrate; a mixing portion communicating with the spout; a sulfuric acid-containing liquid supply device which recovers liquid supplied to and expelled from the substrate held by a substrate holding unit, prepares a sulfuric acid-containing liquid from the recovered liquid, and supplies the prepared sulfuric acid-containing liquid to the mixing portion; and a control device. The control device performs: a sulfuric acid-containing liquid preparing step of recovering SPM supplied to and expelled from the substrate and preparing the sulfuric acid-containing liquid; and an SPM spouting step of supplying the prepared sulfuric acid-containing liquid and hydrogen peroxide water to the mixing portion, mixing the sulfuric acid-containing liquid and hydrogen peroxide water together in the mixing portion to prepare SPM, and spouting the prepared SPM from the spout.

A fluid heating device includes: a tank to store a fluid; a pump to deliver the fluid stored in the tank; a heater to heat the delivered fluid to a predetermined temperature; a return pipe to return the heated fluid to the tank; a fluid supply valve to supply an unheated fluid into the tank; a fluid discharge valve to discharge the heated fluid from the tank; a temperature sensor to detect a temperature of the heated fluid; and a temperature controller to control an opening degree of each of the fluid supply valve and the fluid discharge valve to control the temperature of the fluid stored in the tank. The temperature controller includes: a discharge opening-degree controller-to control the opening degree of the fluid discharge valve; and a supply opening-degree controller to control the opening degree of the fluid supply valve.

The inventive concept relates to an apparatus and method for forming a film on a substrate by spin coating. The apparatus includes liquid dispensing units that dispense processing liquids to form liquid films on the first and second substrates, respectively, air-flow supply units that form downward air flows in the first and second spaces, respectively, and a controller that controls the liquid dispensing units and the air-flow supply units. Each of the liquid dispensing units includes a pre-treatment nozzle that dispenses a pre-treatment liquid and a coating solution nozzle that dispenses a coating solution onto a corresponding one of the first and second substrates. The controller controls the liquid dispensing units to dispense the pre-treatment liquids and thereafter the coating solutions onto the first and second substrates and adjusts supply states of the downward air flows according to amounts of the pre-treatment liquids dispensed.

The substrate processing method includes alternately performing a plurality of times of a metal oxide layer forming process in which an oxidation fluid is supplied to a surface of the substrate and a metal oxide layer composed of a one-atom layer or a several-atom layer is formed on a surface layer of the metal layer; and a metal oxide layer removal process in which an etching solution is supplied to the surface of the substrate and the metal oxide layer is removed from the surface of the substrate. A final dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the surface of the substrate in a final metal oxide layer removal process is lower than an initial dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the substrate in an initial metal oxide layer removal process.

A method of forming a high-K dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-K dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-K dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-K dielectric cap layer, and removing the sacrificial silicon cap layer.

A miniaturized semiconductor manufacturing system including: a housing, a lifting mechanism, a processing chamber and a transportation mechanism. The housing includes an inner space and an opening communicated with the inner space. The lifting mechanism is disposed in the inner space and includes a holder configured for a substrate to be placed thereon. The holder is movable in a first direction relative to the opening between a first position and a second position. The processing chamber is disposed in the inner space and includes a holding portion configured for the substrate to be placed thereon. The transportation mechanism is disposed between the lifting mechanism and the processing chamber and is movable in a second direction. Wherein an aspect ratio value of the housing is between 1 to 6.

A substrate processing apparatus 100 includes a processing unit, a reservoir 31, a processing liquid pipe 32, a pump 34, a filter 35, a first flow rate section 36, a first return pipe 51, a first adjustment valve 52, a second return pipe 41, a branch supply pipe 16, a second flow rate section 42, and a controller. The first flow rate section 36 is placed in the processing liquid pipe 32 and measures a flow rate or pressure of the processing liquid flowing through the processing liquid pipe 32. The first adjustment valve 52 is placed in the first return pipe 51 and adjusts a flow rate of the processing liquid flowing through the first return pipe 51. The controller controls an opening degree of the first adjustment valve 52 based on the flow rate or the pressure of the processing liquid measured by the first flow rate section 36.

A light emitting element is positioned at a position right below one principal surface of a substrate rotating about an axis of rotation and away from an end surface of the substrate toward the axis of rotation. The light emitting element is arranged as to be inclined from a horizontal plane so that the light emitting surface faces a peripheral edge part of the substrate. Light emitted from the light emitting surface of the light emitting element is irradiated to a lower surface peripheral edge part of the substrate or a region near the lower surface peripheral edge part. As a result, a processing by the processing liquid is possible in a short time.

Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.

Provided are a treating liquid providing unit capable of predicting a temperature change of a substrate treating liquid by adding an inflow amount or consumption amount of the substrate treating liquid as a control factor, and a substrate treating apparatus including the same. The treating liquid providing unit includes a treating liquid storage module for storing the substrate treating liquid, a treating liquid heating module for heating the substrate treating liquid, a treating liquid discharging module for discharging the substrate treating liquid, a treating liquid supplying module for supplying the substrate treating liquid to the treating liquid storage module when the substrate treating liquid is discharged, and a control module for predicting the temperature of the substrate treating liquid remaining in the treating liquid storage module based on the inflow amount of the substrate treating liquid.