A wet etching control system includes a liquid level detector, an etching agent spraying component, a cleaning agent spraying component and controller. The liquid level detector is configured to detect a liquid level of leakage liquid in a leakage liquid collection tank, and the controller is configured to control the etching agent spraying component to stop a spraying of an etching agent onto a surface of a wafer, and control the cleaning agent spraying component to spray a cleaning agent onto the surface of the wafer when the liquid level of the leakage liquid is greater than a first preset value.

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes an imaging unit that photographs loci of the one or more discharge liquids discharged from the plurality of nozzles, and an inspection unit that calculates impact points of the one or more discharge liquids discharged from the plurality of nozzles and determines whether the impact points of the one or more discharge liquids discharged from the plurality of nozzles are normal. The inspection unit includes an image synthesizing unit that synthesizes a plurality of images captured by the imaging unit, a pre-processing unit that pre-processes image data generated through the image synthesizing unit, and a calculation unit that calculates whether the impact points of the one or more discharge liquids discharged from the plurality of nozzles are normal by comparing the image data pre-processed by the pre-processing unit.

A substrate processing method includes performing a liquid processing, detecting a temperature, generating temperature distribution information and determining whether a result of the liquid processing is good or bad. The liquid processing is performed on a substrate by using a processing unit. A temperature of a central portion of the substrate and a temperature of an edge portion of the substrate in the liquid processing are detected by using multiple sensors provided in the processing unit. The temperature distribution information indicating an in-surface temperature distribution of the substrate in the liquid processing is generated based on one or more parameter values defining a processing condition for the liquid processing and the temperature of the central portion of the substrate and the temperature of the edge portion of the substrate. Whether the result of the liquid processing is good or bad is determined based on the temperature distribution information.

A substrate supporting member capable of controlling the flow of charges on a substrate by controlling ground resistance values of a guide pin and a support pin using a variable resistor, and a substrate treating apparatus including the same are provided. The substrate supporting member includes the body; a support pin installed on the body and for supporting the substrate; a guide pin installed on the body and for supporting the substrate; and a charge control device for controlling a charge around the substrate by controlling an electrical connection between the support pin and a first resistor and an electrical connection between the guide pin and a second resistor.

A particle removal method for removing particles on the backside of a reticle is provided. The method includes disposing the reticle on a reticle holder. In addition, the method includes moving a baffle defining an enclosed area that encompasses a particle to be removed on a backside of the reticle. The method further includes spraying, by a solution spraying module of a particle removal device, a solution onto the particle. The method further includes sucking, by a sucking module of the particle removal device, the solution on the reticle with the particle. The method further includes emitting, by the particle removal device, a gas onto the backside of the reticle for drying the backside.

An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may include a second lid plate coupled with the plurality of lid stacks. The plurality of lid stacks may be positioned between the first lid plate and the second lid plate. A component of each lid stack of the plurality of lid stacks may be coupled with the second lid plate.

A substrate processing apparatus with efficient drying includes a chamber body having an upper opening, a chamber cover having a lower opening, and a shield plate disposed in a cover internal space of the chamber cover. With the upper opening of the chamber body covered by the chamber cover, a chamber is formed. In the cover internal space, a scanning nozzle for discharging a processing liquid toward a substrate is disposed and an inert gas is supplied and a gas is exhausted from the inside. When the processing liquid is supplied onto the substrate, the discharge part is disposed at a discharge position, and when the discharge part is dried while no processing liquid is supplied onto the substrate, the discharge part is disposed at a waiting position and the lower opening is closed by the shield plate.

According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a main portion and an alumite layer. The main portion includes aluminum. The alumite layer is provided at a front surface of the main portion. The particle-resistant layer is provided on the alumite layer and includes a polycrystalline ceramic. An Al purity of the main portion is 99.00% or more.

An alkaline etchant containing a quaternary ammonium hydroxide, water, and an inhibitory substance for inhibiting contact between hydroxide ions generated from the quaternary ammonium hydroxide and objects P1 to P3 to be etched is prepared. The prepared etchant is supplied to a substrate in which the polysilicon-containing objects P1 to P3 to be etched and objects O1 to O3 not to be etched, which are different from the objects P1 to P3 to be etched, are exposed, thereby etching the objects P1 to P3 to be etched while preventing the objects O1 to O3 not to be etched from being etched.