A method for forming an oligomer-containing layer on a substrate and in a concave portion formed on the substrate by performing a cycle a predetermined number of times under a first temperature, the cycle including supplying a precursor gas to the substrate, and supplying first and second nitrogen- and hydrogen-containing gases to the substrate, so an oligomer including an element in at least one selected from the group of the precursor gas, and the first and second nitrogen-hydrogen-containing gasses, flowed in the concave portion, and (b) forming a film to fill the inside of the concave portion by post-treating the substrate, which has the oligomer-containing layer formed on the surface of the substrate and in the concave portion, under a second temperature not less than the first temperature, so that the oligomer-containing layer formed in the concave portion is modified to form the film.

A wafer processing apparatus includes a pressure applying element, a rotatable element, a control element, and a heat source. The pressure applying element includes a first pressure applying head having a first working surface and a second pressure applying head having a second working surface. The rotatable element and the pressure applying element are connected. The control element is electrically connected to the rotatable element. The heat source is disposed beside the pressure applying element.

Electrostatic chucks and methods of using electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a heating element embedded within the ceramic body, and two or more temperature measurement devices embedded within the ceramic body. Exemplary methods include measuring temperatures within the electrostatic chuck using two or more vertically spaced-apart temperature measurement devices.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-shield member, a second-shield member and a driver. The first-shield member has a first-inner-edge surface disposed with a protrusion. The second-shield member has a second-inner-edge surface disposed with a cavity. The driver interconnects and drives the first-shield member and the second-shield member to sway in opposite directions. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

Provided is a support unit including a support plate on which the substrate is placed, and a support protrusion provided on the support plate and separating the substrate from the support plate, wherein the support plate includes a first protrusion protruding from an upper surface of the support plate, wherein the first protrusion is provided in a support region provided by the support protrusion.

A substrate treating apparatus is provided. The substrate treating apparatus includes an atmospheric pressure transfer module provided with a first transfer robot having a first hand with a substrate placed thereon; a vacuum transfer module provided with a second transfer robot having a second hand with a substrate placed thereon; a load-lock chamber positioned between the atmospheric pressure transfer module and the vacuum transfer module, and having an inner space convertible between an atmospheric pressure and a vacuum atmosphere; a process chamber coupled to the vacuum transfer module and treating the substrate; and a ring carrier supported by the first transfer robot or the second transfer robot for a transfer of a ring member. The ring carrier comprises a plate having the ring member placed thereon and at least one leg protruding from a bottom surface of the plate and placed at the first hand or the second hand.

Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings. The first training data and the second training data are provided to train the machine learning model to predict which process recipe settings for the substrate temperature control process to be performed for the current substrate correspond to a target scratch profile for one or more surfaces of the current substrate.

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.