A control method of a film forming apparatus includes (a) acquiring a first temperature measured by a first temperature sensor in a tubular member in a processing container of the film forming apparatus; (b) calculating a first power to be output to a heating unit disposed in the processing container; (c) acquiring a second temperature measured by a second temperature sensor provided outside the tubular member in the processing container; (d) calculating a second power to be output to the heating unit; (e) calculating a predicted value of the second temperature at a predetermined time ahead, from the second temperature based on a prediction model; (f) outputting either the first power or the second power to the heating unit according to the predicted value of the second temperature; and (g) repeating (a) to (f) in a predetermined cycle.

The present invention provides a method of treating a substrate, the method including: performing a first heating process of heat-treating the substrate formed with a film, and a second heating process of heat-treating the substrate after the first heating process is performed; a collection operation of collecting temperature data of a first heating plate which heats the substrate in the first heating process; and a first control operation of adjusting a temperature of a second heating plate which heats the substrate in the second heating process based on the temperature data.

A substrate processing apparatus includes: a rotary table provided in a processing container; a rotation mechanism configured to rotate the rotary table; recesses provided on an upper surface of the rotary table along a rotation direction of the rotary table and configured to accommodate substrates, respectively; a processing gas supply provided above the rotary table and configured to supply a processing gas onto the rotary table to process each of the substrates; a heater configured to heat the rotary table; a support configured to support the substrates in upper regions above the recesses so that the heater heats the substrates before being accommodated in the recesses; and an elevating mechanism configured to raise and lower the support relative to the rotary table so that the substrates are collectively moved from the upper regions into the recesses.

A method for depositing a silicon nitride film is provided. A silicon nitride film is deposited in a depression formed in a surface of a substrate from a bottom surface and a lateral surface by ALD toward a center of the depression in a lateral direction so as to narrow a space at the center of the depression. First nitrogen radicals are adsorbed into the depression immediately before a stage of filling the space at the center with the silicon nitride film deposited toward the center of the depression. A silicon-containing gas is adsorbed on the first nitrogen radical in the depression by physical adsorption. Second nitrogen radicals are supplied into the depression so as to release the silicon-containing gas from the first nitrogen radical and to cause the released silicon-containing gas to react with the second nitrogen radical, thereby depositing a silicon nitride film to fill the central space.

An etching method includes preparing a substrate in which titanium nitride and molybdenum or tungsten are present, and etching the titanium nitride by supplying a processing gas including a ClF.sub.3 gas and a N.sub.2 gas to the substrate, wherein in the etching the titanium nitride, a partial pressure ratio of the ClF.sub.3 gas to the N.sub.2 gas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.

The present invention provides a substrate treating apparatus, including: a housing including a first body and a second body which are combined with each other to provide a treatment space in which a substrate is treated; an actuator which moves the second body in a vertical direction with respect to the first body to seal or open the treatment space; and a pipe which is coupled with the second body and in which a fluid flows, in which the pipe is a stretchable pipe that is stretchable and contractible according to the vertical movement of the second body.

A substrate processing apparatus includes a chamber, a plurality of devices, and a controller. The chamber is subjected to substrate processing. The plurality of devices execute operations related to substrate processing. The controller controls the operations of the plurality of devices. Further, the controller determines whether or not an error has occurred during performing the substrate processing in a chamber, and causes the plurality of devices to automatically execute a recovery operation corresponding to the content of the error that has occurred when the controller determines that the error has occurred and has suspended the substrate processing.

In a ceramic heater, a central-zone heating resistor and an outer-peripheral-zone heating resistor are embedded in a disc-like ceramic base having a wafer-mounting surface on one side. The central-zone heating resistor is a wire extending in a single continuous line from one of a pair of terminals to the other. The pair of terminals as a whole form a circular shape in plan view.

Implementations of the present disclosure generally relate to an improved substrate support pedestal assembly. In one implementation, the substrate support pedestal assembly includes a shaft. The substrate support pedestal assembly further includes a substrate support pedestal, mechanically coupled to the shaft. The substrate support pedestal comprises substrate support plate coated on a top surface with a ceramic material.

There is provided a drying apparatus for covering an upper surface of the substrate with an uneven pattern formed thereon with a liquid film and subsequently drying the substrate, including: a first heat transfer part whose temperature is adjusted to a first temperature, wherein a first heat is transferred between the first heat transfer part and the substrate by a first temperature difference; a second heat transfer part whose temperature is adjusted to a second temperature different from the first temperature, wherein a second heat is transferred between the second heat transfer part and the substrate by a second temperature difference; and a controller configured to control the first temperature and the second temperature and to control a surface tension distribution of the liquid film so as to control an agglomeration of the liquid film.