Provided are an electrostatic chuck, which is manufactured to be reusable by removing a part of a dielectric layer except for a DC electrode and a heater electrode and depositing a new dielectric layer thereon, and a method for manufacturing the electrostatic chuck, and a substrate processing system including the electrostatic chuck. The method for manufacturing the electrostatic chuck includes, after using an electrostatic chuck, removing a portion of an upper part of a first dielectric layer of the electrostatic chuck where an electrode is not formed, depositing a second dielectric layer on the first dielectric layer from which the portion of the upper part has been removed, and patterning the second dielectric layer to enable reuse of the electrostatic chuck.

An upper member is disposed at an upper portion within a processing chamber. A ceiling member forms a ceiling of the processing chamber, and is provided with a through hole at a facing surface thereof which faces the upper member. A supporting member supports the upper member with a first end thereof located inside the processing chamber by being inserted through the through hole and slid within the through hole. An accommodation member accommodates therein a second end of the supporting member located outside the processing chamber, and is partitioned into a first space at a first end side and a second space at a second end side in a moving direction with respect to the second end. A pressure controller generates a pressure difference between the first space and the second space. The pressure difference allows the supporting member to be moved.

A heat treatment device includes: a heating plate configured to support and heat a substrate on which a resist film is formed; a chamber configured to cover a processing space above the heating plate; a gas supply configured to supply a gas into the chamber along a gas flow path connected to an inside of the chamber, the gas flow path beginning from an outer periphery of the heating plate and extending along an upper surface of the heating toward an end portion on an outer periphery of the substrate; and an exhaust port configured to evacuate inside of the chamber through exhaust holes that are formed above the processing space and open downwards.

An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.

An interconnection structure of a system on wafer and a PCB based on a TSV process and a method for manufacturing the same. The structure comprises a bottom structural part and a top structural part, the upper surface of the bottom structural part is provided with a plurality of positioning holes; the lower surface of the top structural part is provided with positioning pins; the upper surface of the bottom structural part is provided with a bottom groove, and a system on wafer is arranged in the bottom groove; the lower surface of the system on wafer is connected with the bottom groove; the lower surface of the top structural part is provided with a top groove, and a PCB preformed die is connected in the top groove, and the other end of the PCB preformed die is connected with the system on wafer by an elastic connector.

There is provided a substrate processing apparatus including: an inner tube including a substrate accommodating region where substrates are accommodated along an arrangement direction; an outer tube outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at an end portion of the outer tube along the arrangement direction; and a gas guide controlling gas flow in an annular space between the inner and outer tubes. A first exhaust port A is located farthest from the second exhaust port, and faces a gas supply port A. The gas guide includes a fin provided near the gas supply port A and surrounds at least a part of an outer periphery of the gas supply port A.

The present disclosure provides a heater and a heating base. The heater is used in a semiconductor process apparatus and includes a heating body and a base configured to support the heating body. The base includes a base body and a plate connected to each other. The base body is opposite to the heating body and arranged at an interval. The plate is arranged between the base body and the heating body and is fixedly connected to the heating body. An elastic bending structure is arranged on at least one of the plate, the base body, or the connection place between the plate and the base body. The elastic bending structure is configured to cause the plate and the heating body to remain connected by generating elastic deformation when the plate and the base body expand and deform.

An electrostatic chuck includes: a disk-shaped ceramic plate having a wafer placement surface on a surface thereof; an electrostatic electrode embedded in the ceramic plate; and gas grooves that are divided in a plurality of zones when the ceramic plate is seen from above and each of which is independently provided in the wafer placement surface so as to extend from one to the other of a pair of gas supply/discharge openings for a corresponding one of the zones. A pattern in which a gas is supplied to each of the gas grooves provided for a corresponding one of the zones is selectable between a first pattern in which the gas flows from one to the other of the pair of gas supply/discharge openings and a second pattern in which the gas flows from the other to the one of the pair of gas supply/discharge openings.

An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula:

[Chemical Formula]

M.sub.xAl.sub.1−xN.sub.y,

wherein x and y satisfy the following relations: 0<x<1 and y≥1.

The present disclosure provides a heating device and heating method for a semiconductor thermal process. The heating device includes: a first heating portion, on which a wafer to-be-heated is placed; a second heating portion, where the first heating portion and the second heating portion are arranged in parallel, and the second heating portion is configured to heat the first heating portion; and an adjustment portion, configured to adjust a vertical distance between the first heating portion and the second heating portion.