A photolithography apparatus includes a cleaning unit which cleans a target substrate, a drying unit which dries the target substrate provided from the cleaning unit, and a coating unit which forms a photoresist layer by coating a photoresist on the target substrate provided from the drying unit. The drying unit includes a first vacuum unit which performs a vacuum treatment on the target substrate.

A heating device includes a heating assembly. The heating assembly includes a ventilation structure configured to blow gas to an edge of a to-be-processed workpiece carried by the heating device. The heating device further includes a base arranged on a side of the heating assembly away from a heating surface of the heating assembly. A mounting space is formed between the base and the heating assembly. The heating device also includes a cooling mechanism arranged in the mounting space, located at a position corresponding to an edge area of the heating surface, and configured to cool the heating assembly.

A method for applying RF power in a plasma process chamber is provided, including: generating a first RF signal; generating a second RF signal; generating a third RF signal; wherein the first, second, and third RF signals are generated at different frequencies; combining the first, second and third RF signals to generate a combined RF signal, wherein a wave shape of the combined RF signal is configured to approximate a sloped square wave shape; applying the combined RF signal to a chuck in the plasma process chamber.

A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

A mounting table includes a base member, having a rear surface and a front surface facing the rear surface, in which a coolant path is formed, a groove portion having a bottom surface within the base member being annularly formed on the front surface, the base member being divided into a cylindrical inner base member portion positioned at an inner side of the groove portion and an annular outer base member portion positioned at an outer side of the groove portion by the groove portion; an annular focus ring supported by the outer base member portion, the annular focus ring having, at an inner side surface thereof, a protrusion that is protruded radially and inwardly to cover the groove portion; a first heat transfer member provided between the mounting surface and the coolant path; and the second heat transfer member provided between the focus ring and the coolant path.

ABSTRACT An apparatus is for collecting a by-product in a semiconductor manufacturing process. The apparatus includes: a housing cooling channel on an inner wall thereof to cool exhaust gas which is temperature-controlled by a heater while being introduced through a gas inlet of an upper plate; an internal collecting tower including multiple vertical plates and multiple horizontal plates that are assembled, and condensing and collecting a by-product from the exhaust gas; a main cooling channel having a serpentine shape and cooling the exhaust gas uniformly by using coolant while passing through the internal collecting tower; and a multi-connection pipe sequentially supplying the coolant to the upper plate cooling channel, the housing cooling channel, and the main cooling channel and discharging the coolant, by using a supply pipe and a discharge pipe that are provided outside the housing.

A liquid treatment apparatus includes: a substrate holder for holding a substrate; a discharge nozzle for discharging a treatment liquid onto the substrate; a liquid supply pipe for supplying the treatment liquid from a treatment liquid storage source to the discharge nozzle; a gas pipe that encompasses the liquid supply pipe and through which an inert gas for adjusting the temperature of the treatment liquid flows in a space between the gas pipe and the liquid supply pipe; a processing container in which the substrate holder, the discharge nozzle, the liquid supply pipe, and the gas pipe are provided; and an atmosphere gas supply part for supplying an atmosphere gas into the processing container. The gas pipe is provided so that an extension portion between an upstream end inside the processing container and an encompassing portion is folded back inside the processing container in a plan view.

A temperature controlling apparatus includes a platen, a first and a second conduits, and a first and a second outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater. A first fluid enters the first inlet and exits the first outlet, the first heater heats the first fluid to a first heating temperature, and the first fluid is dispensed on the platen. The second conduit includes a second inlet, a second outlet, and a second heater. A second fluid enters the second inlet and exits the second outlet, the second heater heats the second fluid to a second heating temperature, and the second fluid is dispensed on the platen. The first and the second outlet thermal sensors are respectively disposed at the first and the second outlets to sense temperatures of the first and the second fluid.

A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.