A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a low-viscosity resin applying step of coating the face side of the wafer with a first liquid resin of low viscosity to cover an area of the wafer where the plurality of devices are present, a high-viscosity resin applying step of, after the low-viscosity resin applying step, coating the face side of the wafer with a second liquid resin of higher viscosity than the first liquid resin in overlapping relation to the first liquid resin, a resin curing step of curing the first liquid resin and the second liquid resin that have coated the face side of the wafer into a protective film, and a planarizing step of planarizing the protective film.

A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a resin applying step of coating the face side of the wafer with a liquid resin to cover an area of the wafer where the plurality of devices are present, a resin curing step of curing the liquid resin into a protective film, a protective tape laying step of laying a protective tape on an upper surface of the protective film, and a planarizing step of planarizing a face side of the protective tape.

Examples of a substrate transfer system include a chamber in which a plurality of through holes are formed on a side surface, a substrate transfer device provided in the chamber, and a lamp heater disposed in the chamber. The lamp heater is configured to heat an inner wall of the chamber and the substrate transfer device.

A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.

A lamp for heating is composed of a heat dissipation substrate made of metal, an insulating layer disposed on the heat dissipation substrate, a plurality of wiring patterns disposed on the insulating layer, a plurality of light source elements disposed on the plurality of wiring patterns on a one-to-one basis, a joining material electrically joining each of the plurality of wiring patterns and each of the plurality of light source elements, and a metal wiring electrically connecting each adjacent pair of the plurality of light source elements.

A method includes transferring a wafer to a position over a wafer chuck; ejecting a first gas from a purging device above the wafer to clean a top surface of the wafer; after ejecting the first gas, lifting a lifting pin through the wafer chuck to receive the wafer; and after the wafer is received by the lifting pin, ejecting a second gas from first openings in a sidewall of the lifting pin to a region between a bottom surface of the wafer and a top surface of the wafer chuck.

A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.

The inventive concept provides an apparatus and method for removing a film formed on a substrate. A method for treating the substrate includes a primary solvent dispensing step of dispensing an organic solvent onto the substrate to remove a photoresist film on the substrate and an ozone dispensing step of dispensing a liquid containing ozone onto the substrate to remove organic residue on the substrate, after the primary solvent dispensing step.

A laser light source is provided including an airtight container. A first resonance mirror and a second resonance mirror are disposed outside the airtight container. The first resonance mirror includes a lens unit and a reflection coating layer. The lens unit includes a first surface and a second surface, and the first surface is inclined with respect to the second surface.

A semiconductor processing system includes a semiconductor processing chamber, a pump, an exhaust line in fluid communication with the chamber through the pump, and a steam generator and reactor. The steam generator and reactor has a process conduit with an inlet in line in the exhaust line for generating superheated steam and effecting transformations of chemicals in the exhaust fluid flowing in exhaust line into the inlet.