Patent classifications
H01L21/67393
Substrate processing method and substrate processing apparatus
A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).
Systems, devices, and methods for air flow optimization including adjacent a FOUP
A system comprises a front opening universal pod (FOUP) configured to hold one or more semiconductor wafers and a load dock having a stage and a receiving portion extending above the stage. The FOUP is positioned on the stage. A fan filter unit (FFU) positioned above the load dock. An air flow optimizer device is disposed on the receiving portion and under the FFU. The air flow optimizer device has an inlet opening and an outlet opening and a channel extends between the inlet opening and the outlet opening.
Carrier for measurement and wafer transfer system including the same
A measurement carrier includes a housing having an internal space, and a flow-rate measuring device located within the internal space. A bottom surface of the housing includes a first inflow hole, a second inflow hole, and an outflow hole, which provide fluid communication between the internal space and an outer space. The flow-rate measuring device may include a first flow-rate measuring sensor in fluid communication with the first inflow hole, and a second flow-rate measuring sensor in fluid communication with the second inflow hole.
HEAT TREATMENT APPARATUS AND DUMMY SUBSTRATE PROCESSING METHOD
A heat treatment apparatus for applying a heat treatment to a plurality of substrates including a product substrate and a dummy substrate includes: a process container configured to accommodate the plurality of substrates; a storage container provided outside the process container and configured to store the dummy substrate; and an oxidation mechanism configured to oxidize the dummy substrate stored in the storage container.
SUBSTRATE STORAGE CONTAINER
A substrate storing container includes: a container main body; a lid body which is attachable to and detachable from a container main body opening portion, and which is able to block the container main body opening portion; and a component which is attached to the container main body or to the lid body. A connected part between the component and the container main body, the lid body or another component includes press-fit fixing portions, which are positioned by means of press fitting while being fixed to each other; and impulse welding portions which are formed by impulse welding, to maintain the positioning and fixing in the press-fit fixing portions.
AIR PROCESSING SYSTEM FOR SEMICONDUCTOR CONTAINER
A container includes a container body and an air processing system. The container body includes a plurality of walls defining an interior space for receiving wafers. The air processing system is attached to the container body. The air processing system includes an exchange module, an air extraction module, a first contaminant removal module, a processing module, a second contaminant removal module, a controller module and a power module. The exchange module is coupled to one of the walls of the container body. The air extraction module extracts air from the container body. The first contaminant removal module is coupled to the air extraction module and the exchange module. The processing module is coupled to the air extraction module. The second contaminant removal module is coupled to the processing module and the exchange module. The controller module is configured to turn the air extraction module on and off.
SEALED SUBSTRATE CARRIERS AND SYSTEMS AND METHODS FOR TRANSPORTING SUBSTRATES
A semiconductor processing system includes a first component forming a first chamber. A first sealed environment in the first chamber is at a first state prior to a door being opened. A load port structure is disposed between the first component and a second component. The load port structure includes walls disposed around an opening of the load port structure. The load port structure is separate from the first component and the second component. A third component is configured to change at least one of the first state of the first sealed environment within the first chamber or a second state of a second sealed environment within a second chamber formed by the second component to cause the first state and the second state to be substantially similar before the door between the first sealed environment and the second sealed environment is opened.
Equipment front end module
In an inert-gas circulating type EFEM, generation of any constraints on installation of incidental equipment, a maintenance door, or the like is inhibited, and the need for changing the placement position, etc. of a feedback path according to the specifications, etc. of a substrate processing device connected thereto is eliminated. An EFEM 1 is provided with: a transfer chamber 41 in which a wafer W is conveyed; a unit installation chamber 42 in which a FFU 44 for feeding nitrogen to the transfer chamber 41 is installed; and a return path 43 for feeding the nitrogen having flown through the transfer chamber 41, back to the unit installation chamber 42. A substrate processing apparatus 6 is connected to the rear-side end of the transfer chamber 41. The return path 43 is disposed at the front-side end of the transfer chamber 41.
GAS PURGE DEVICE AND GAS PURGING METHOD
The present disclosure provides a gas purge device and a gas purge method for purging a wafer container to clean wafers. The gas purge device includes a first nozzle and a gas gate. The first nozzle is coupled to a front-opening unified pod (FOUP) through a first port of the FOUP. The gas gate is coupled to the first nozzle via a first pipe. The gas gate includes a first mass flow controller (MFC), a second MFC, and a first switch unit. The first MFC is configured to control a first flow of a first gas. The second MFC is configured to control a second flow of a second gas. The first switch unit is coupled to the first MFC and the second MFC, and is configured to provide the first gas to the first nozzle through the first pipe or receive the second gas from the first nozzle through the first pipe according to a process configuration.
EQUIPMENT FRONT END MODULE
Proposed is an EFEM configured to perform wafer transfer between a wafer storage device and process equipment. More particularly, proposed is an EFEM that prevents harmful gases inside a transfer chamber in which wafer transfer is performed from escaping out of the EFEM.