Patent classifications
H01L21/68721
Vacuum chuck, substrate processing apparatus including the same and related method of manufacture
A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.
SUBSTRATE HOLDER AND SUBSTRATE TREATMENT APPARATUS
Provided is a substrate holder and a substrate treatment apparatus capable of positioning a substrate even in a case in which the substrate receives a frictional force and the like from a support surface. A substrate holder 200 according to the present invention includes: a first holding member 300; a second holding member 500 adapted to pinch a substrate W with the first holding member 300; three or more positioning members 360 including contact surfaces 342 that come into contact with side end portions of the substrate W; a first moving member 380 including a plurality of engaging portions 384 that are engaged with the positioning members 360 such that the positioning members 360 with a state in which distances of an ideal axis L and contact surfaces 376 of the positioning members 360 are equal to each other maintained; and a first biasing member 310 adapted to bias the first moving member 380, in which the first moving member 380 delivers a biasing force of the first biasing member 310 to each of the positioning members 360, and the positioning members 360 are biased in a direction in which the contact surfaces 376 approaches the ideal axis L with the delivered biasing force.
CLAMP RING AND METHOD OF USING CLAMP RING
A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.
WAFER CHUCK FOR HANDLING A WAFER
The invention relates to a wafer chuck for handling a wafer, in particular in a wafer process device, further preferably in a scanning acoustic microscope, with a fixing device for the wafer, wherein the fixing device has a free space for receiving the wafer and a holder with multiple wafer contact fingers, which are movable relative to the holder for a wafer. The wafer contact fingers are arranged annularly around the free space for the wafer, preferably in one plane. The wafer contact fingers can be moved in the direction of the free space for the wafer or can be moved away from the free space for the wafer. One actuation device for the wafer contact fingers is provided and, when the actuation device is actuated, the wafer contact fingers are moved or can be moved simultaneously.
Methods and apparatus for measuring edge ring temperature
An apparatus for measuring a temperature of an assembly that is internal to a process chamber. The apparatus may include a light pipe positioned between a lamp radiation filtering window and the assembly, the light pipe has a first end with a bevel configured to redirect infrared radiation emitted from the assembly through the light pipe and has a second end distal to the first end, an optical assembly configured to collimate, filter, and focus infrared radiation from the second end of the light pipe, an optical detector configured to receive an output from the optical assembly and generate at least one signal representative of the infrared radiation, a temperature circuit that transforms the at least one signal into a temperature value, and a controller that is configured to receive the temperature value and to make adjustments to other process parameters of process chamber based on the temperature value.
SUBSTRATE HOLDING APPARATUS AND SUBSTRATE PROCESSING APPARATUS
The present disclosure provides a technology for holding a substrate with high precision and a high degree of flatness. A substrate holding device of the present disclosure comprises: a rotary stage; and a clamp part that supports, in a planar direction of the substrate, an edge of a substrate which is the object to be rotated by the rotary stage. The rotary stage is provided with: a plurality of gas supply openings that supply a gas toward the substrate; and one or more gas exhaust openings that are provided to each of the plurality of gas supply openings so as to surround the periphery of the gas supply opening.
EDGE RING FOR SEMICONDUCTOR MANUFACTURING PROCESS WITH DENSE BORON CARBIDE LAYER ADVANTAGEOUS FOR MINIMIZING PARTICLE GENERATION, AND THE MANUFACTURING METHOD FOR THE SAME
Proposed is an edge ring for a semiconductor manufacturing process, and specifically, to an edge ring for a semiconductor manufacturing process, which has a denser surface structure by forming a denser boron carbide surface layer on the surface of a sintered body (base layer) formed of boron carbide powder and forming a mixed layer for preventing peeling between the base layer and the surface layer and improving physical properties therebetween, and thus the boron carbide sintered body is prevented from being cracked during a harsh plasma process, and particle generation caused by the cracking is effectively suppressed, and as a result, a defective product rate can be reduced, and a manufacturing method thereof.
PROCESSES AND APPLICATIONS FOR CATALYST INFLUENCED CHEMICAL ETCHING
A system for assembling fields from a source substrate onto a second substrate. The source substrate includes fields. The system further includes a transfer chuck that is used to pick at least four of the fields from the source substrate in parallel to be transferred to the second substrate, where the relative positions of the at least four of the fields is predetermined.
PLASMA CONTROL METHOD IN SEMICONDUCTOR WAFER FABRICATION
A method for processing a semiconductor wafer is provided. The method includes placing a first semiconductor wafer on a wafer chuck in a process chamber. The method further includes adjusting a distance between a gas dispenser positioned above the wafer chuck and an upper edge ring surrounding the wafer chuck. The method also includes producing a plasma for processing the first semiconductor wafer by exciting a gas dispenser from the gas dispenser after the adjustment. In addition, the method includes removing the first semiconductor wafer from the process chamber.
MEMBER FOR PLASMA PROCESSING APPARATUS, METHOD FOR MANUFACTURING SAME, AND PLASMA PROCESSING APPARATUS
A member for a plasma processing apparatus includes a base material and a heat transfer layer provided on one surface of the base material, and the heat transfer layer contains at least one of a fluorine-based resin and a fluorine-based elastomer.