Provided is a susceptor which makes it possible to increase the circumferential flatness uniformity of an epitaxial layer of an epitaxial silicon wafer. A susceptor 100 is provided with a concave counterbore portion on which a silicon wafer W is placed, and the radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies at 90° periods in the circumferential direction. Meanwhile, when the angle at which the radial distance L is minimum is 0°, the radial distance L is a minimum value L.sub.1 at 90°, 180°, and 270°; and the radial distance L is a maximum value L.sub.2 at 45°, 135°, 225°, and 315°. Accordingly, the pocket width L.sub.p also varies in conformance with the variations of the radial distance L. The opening edge 110C describes four elliptical arcs being convex radially outward when the susceptor 100 is viewed from above.

A method for the transfer of components from a sender substrate to a receiver substrate includes provision and/or production of the components on the sender substrate, transfer of the components of the sender substrate to the transfer substrate, and transfer of the components from the transfer substrate to the receiver substrate.The components can be transferred selectively by means of bonding means and/or debonding means.

A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

There is a substrate placing method for placing a substrate on a placing surface of a placing table in a chamber of a substrate processing apparatus for processing a substrate, the placing table having the placing surface on which a substrate is placed and a tapered surface for guiding the substrate disposed at an outer periphery of the placing surface, the method comprising, locating a lift pin to a substrate transfer position over the placing surface, the lift pin being capable of protruding from and retracting below the placing surface, and transferring the substrate onto the lift pin; lowering the lift pin, on which the substrate is placed, to a substrate placing position lower than the placing surface; and raising the lift pin by a short distance and then returning the lift pin to the substrate placing position.

A substrate support includes an outer edge ring configured to be raised and lowered relative to the substrate support via one or more lift pins. The outer edge ring is further configured to interface with a guide feature extending upward from a middle ring of the substrate support. An inner edge ring is located radially inward of the outer edge ring and is configured to be raised and lowered, independently of the outer edge ring, relative to the substrate support via one or more lift pins.

A modified technology of spin coating which is named Two-Axis spin coating is disclosed. The innovative Two-Axis spin coating apparatus is a rotary device that spins the substrate horizontally the same as conventional spin coaters while the whole horizontal spinning system can be rotated vertically. The vertical rotation of the substrate generates a vertical centrifugal force perpendicular to the surface of the substrate which allows the coating face with an elevated artificial gravity acceleration. The elevation of gravity acceleration adjusts and normalizes the local high and low surface tension stresses on the surface of the coated film. This elevation of gravity also increases the weight of coating elements artificially and obliges the wavy surface convex regions to flow toward the concave areas. The elevation of gravity also obliges the lighter probable air bubbles inside the layer, immediately before the coating surface skinning process, move toward the surface and drain out from the layer. The invention provides a method to level the layer's edge beads, level the coated surface, drain out probable micro sized air bubbles inside the layer and form denser film simultaneously.

Provided is a heat treatment unit, including: a chamber providing a substrate processing apparatus including: a process chamber in which an upper chamber and a lower chamber are in contact with each other to form a treatment space defined by the upper chamber and the lower chamber; a heating plate positioned in the treatment space to heat a substrate; a lift pin for placing the substrate on the heating plate or for moving the substrate placed on the heating plate to be spaced apart from the heating plate; a driving member connected to the upper chamber or the lower chamber to vertically drive the upper chamber or the lower chamber; an exhaust member connected to a central region of the upper chamber to exhaust the treatment space; and an airflow blocking member provided on an upper surface of the heating plate and formed to surround an edge of the substrate so as to block a surrounding airflow from approaching the edge of the substrate.

Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

A placing table includes an edge ring disposed to surround a substrate, the edge ring having a first recess portion at a lower portion thereof; an electrostatic chuck having a first placing surface on which the substrate is placed, a second placing surface on which the edge ring is placed, and an electrode embedded therein to face the second placing surface; an annular member disposed to surround the electrostatic chuck, the annular member having a second recess portion; and an elastic member disposed in a space surrounded by the first recess portion, the electrostatic chuck and the second recess portion.