The present disclosure relates to a semiconductor processing apparatus having a reaction chamber which can include a baseplate having an opening; a moveable substrate support configured to support a substrate; a movement element configured to move a substrate held on the substrate support towards the opening of the baseplate; a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate support; and a sealing element configured to form a seal between the baseplate and the substrate support, the seal positioned at a greater radial distance from a center of the substrate support than an outer edge of the substrate support. In some embodiments, the sealing element can also include a plurality of apertures extend through the sealing element, the apertures configured to provide a flow path between a position below the sealing element to a position above the sealing element.

An apparatus includes a substrate stage configured to secure a substrate thereon and a motion mechanism configured to rotate the substrate stage. The substrate stage includes a plurality of holding pins for holding an edge of the substrate. Rotating the substrate stage causes a chemical solution dispensed on an upper surface of the substrate to spread outwardly toward the edge of the substrate. At least one of the plurality of holding pins includes at least one opening or at least one tapered side surface, or both, for guiding the chemical solution to flow off the substrate.

Disclosed are chuck assemblies, semiconductor device fabricating apparatuses, and methods of fabricating semiconductor devices. The chuck assembly comprises a chuck base including lower and upper bases, a ceramic plate on the upper base, an edge ring that surrounds the ceramic plate, a ground ring that surrounds an outer sidewall of the edge ring on an edge portion of the lower base, a coupling ring between the ground ring and the upper base and between the edge ring and the edge portion of the lower base, an upper heat sink between the coupling ring and the edge ring, and a sidewall heat sink between the coupling ring and the ground ring and between the coupling ring and the upper base.

A heat treatment device includes: a heating plate that supports and heats a substrate on which a resist film is formed, and the resist film is subjected to an exposure process; a chamber that covers a processing space above the heating plate; a gas ejecting unit that ejects a processing gas from above toward the substrate on the heating plate within the chamber; a gas supply unit that supplies a gas into the chamber from below a surface of the substrate, within the chamber; and an exhaust unit that evacuates inside of the chamber through exhaust holes that are formed above the processing space and open downwards.

A substrate treating method includes measuring an alignment state of a substrate placed on a hand of a transfer unit that transfers the substrate, transferring the substrate to a substrate alignment unit by the transfer unit when the alignment state of the substrate is faulty, aligning a location of the substrate by the substrate alignment unit, and temporarily correcting the location of the substrate before the substrate is loaded on the substrate alignment unit when it is measured in the measuring of the alignment state that the alignment state of the substrate exceeds a sensor reading range.

Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

A wafer carrier disc installation/uninstallation device and an installation/uninstallation method thereof. The installation/uninstallation device includes a first robotic arm 1, a second robotic arm 2, a carrier disc 3, a main correction mechanism 4, a wafer correction mechanism 5 and a material rest mechanism 6. The carrier disc 3, the main correction mechanism 4, the wafer correction mechanism 5 and the material rest mechanism 6 are positioned within the moving range of the first and second robotic arms 1 and 2. The first robotic arm 1 drives an image capturing assembly 11 and a wafer locating member installation/uninstallation mechanism 12 to move. The second robotic arm 2 drives a wafer taking/placing mechanism 21 to move. Multiple wafer discs 31 are disposed on the carrier disc 3. The main correction mechanism 4 corrects the image capturing assembly 11, the wafer locating member installation/uninstallation mechanism 12 to true operation positions.

A substrate support includes: a baseplate; a top plate disposed above the baseplate and configured to support a substrate during processing of the substrate; and a bonding layer bonding the top plate to the baseplate. The bonding layer includes: multiple studs separating the top plate from the baseplate; and a bonding material disposed in areas laterally surrounding the studs and located between the top plate and the baseplate.

Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.

An apparatus and a method for handling a semiconductor substrate are provided. The apparatus includes a chuck table and a first flexible member. The chuck table includes a carrying surface, a first recess provided within the carrying surface, and a vacuum channel disposed below the carrying surface, and the chuck table is configured to hold the semiconductor substrate. The first flexible member is disposed within the first recess and includes a top surface protruded from the first recess, and the first flexible member is compressed as the semiconductor substrate presses against the first flexible member.