A substrate processing apparatus includes a lower plate in a chamber, an electrostatic chuck on the lower plate, the electrostatic chuck including a first step surface, an intermediate ring disposed on the first step surface of the electrostatic chuck, a lower ring surrounding a portion of the intermediate ring and an outer sidewall of the electrostatic chuck on the lower plate, an upper ring covering an upper portion of the intermediate ring, a screw extending through the electrostatic chuck into the lower plate, and a socket connected to each of the screw and the intermediate ring. Each of the screw, the socket and the intermediate ring includes a conductor.

A planarization system is provided. The planarization system includes a first substrate chuck which holds the substrate during a planarization step, and a second substrate chuck which holds the substrate with a non-flat configuration during a separation step.

A wafer chuck table includes a center plate having a plurality of first protrusions each having an upper end at least partially defining a first reference plane, segmented plates arranged around the center plate and having a plurality of second protrusions, each having an upper end at least partially defining a second reference plane such that the segmented plates have separate, respective pluralities of second protrusions at least partially defining separate, respective second reference planes, and driving units configured to adjust an inclination angle of the segmented plates with respect to the center plate so that the first reference plane and the separate, respective second reference planes are coplanar.

A member for semiconductor manufacturing apparatus includes: a ceramic plate; a metal joining layer and a cooling plate (conductive substrate) provided at a lower surface of the ceramic plate; a first hole penetrating the ceramic plate in an up-down direction; and a through-hole and a gas hole (second hole) penetrating the conductive substrate in an up-down direction, and communicating with the first hole. A dense insulating case has a bottomed hole 64 opened in a lower surface, and is disposed in the first hole and the second hole. A plurality of microholes penetrates a bottom of the bottomed hole in an up-down direction. A porous plug is disposed in the bottomed hole and in contact with the bottom.

A semiconductor processing device comprises a susceptor assembly comprising a wafer support configured to support a wafer. The wafer support comprises a wafer support body configured to support the wafer, a purge channel extending laterally from an inner portion of the wafer support body to an outer portion of the wafer support body, a first plenum channel disposed at the outer portion of the wafer support and in fluid communication with the purge channel, and an outlet to deliver purge gas to an edge of the wafer, the outlet in fluid communication with the first plenum channel, a purge gas supply hole on a surface opposite to the wafer support body. The purge gas supply hole is in fluid communication with the purge channel, and a plurality of first purge holes fluidly communicated with the first plenum channel and the purge channel.

A plasma processing apparatus includes a first mounting table on which a target object to be processed is mounted, a second mounting table provided around the first mounting table, and an elevation mechanism. A focus ring is mounted on the second mounting table. The second mounting table has therein a temperature control mechanism. The elevation mechanism is configured to vertically move the second mounting table.

A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

A ring assembly includes: an outer insulating ring on an upper outer periphery of a substrate stage; an edge ring on the outer insulating ring around a wafer seated on the substrate stage; and a shadow ring on the outer insulating ring and the edge ring to be movable up and down within a predetermined stroke range and to cover an edge region of the wafer. An upper surface of the edge ring is located higher than an upper surface of the wafer by a predetermined height. The shadow ring includes an annular body portion, and a recess in a bottom surface of the body portion to receive at least a portion of a protruding upper portion of the edge ring. The shadow ring is spaced apart from the outer insulating ring and the edge ring by a predetermined distance to form a flow path for gas flow therebetween.

Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to support a substrate and a second side opposite the first side; a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings in the pedestal; and vacuum lines that extend from the plurality of substrate lift pin openings and that are configured to pump down the plurality of substrate lift pin openings.