Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

An apparatus for securing a wafer includes a chuck, at least one O-ring disposed on the chuck, a vacuum system connected to the chuck, such that the vacuum system comprises a plurality of vacuum holes through the chuck connected to one or more vacuum pumps, and a controller configured to control the height of the at least one O-ring relative to the top surface of the chuck. The controller is connected to pressure sensors capable of detecting a vacuum. The at least one O-ring may include a plurality of O-rings.

The present disclosure describes a chuck-based device and a method for cleaning a semiconductor manufacturing system. The semiconductor manufacturing system can include a chamber, a chuck housed in the chamber and configured to hold a substrate, and a control device configured to control a translational displacement and a rotation of the chuck. The chuck can include a passage extending along a periphery of the chuck and dividing the chuck into an inner portion and an outer sidewall portion, and a first multiple of openings through the outer sidewall portion of the chuck and interconnected with the passage. The passage can be configured to transport a fluid. The first multiple of openings can be configured to dispense the fluid.

A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) being movable apart from the upper portion (20a) to form a substrate loading gap therebetween, a substrate support system comprising a support table (31) and at least one support element (70) vertically movable in relation to the support table (31) and extending through the support table (31) to receive a substrate within the reaction chamber (20), and a stopper (90) stopping a downward movement of the at least one support element (70) at a substrate loading level.

Examples of a substrate treatment apparatus includes a chamber, a substrate support stage located inside the chamber, an elevation device that moves the substrate support stage up and down, a gate valve provided between the chamber and an adjacent chamber that is adjacent to the chamber, and a chamber state controller including a processor and a memory configured to cause the processor to execute a program stored in the memory, or including a dedicated circuitry, to move the elevation device and the gate valve before a next substrate treatment is performed in the chamber, in a state in which no substrate is present in the chamber.

A substrate processing apparatus for processing a substrate to be measured by a film thickness measurement device, includes: a heat treatment part configured to heat-treat a substrate coated with a coating film; and a fluid supply part configured to supply a fluid, which suppresses variations in a film thickness over time until the film thickness is measured by the film thickness measurement device, to the substrate during or after the heat-treatment by the heat treatment part.

Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma processing chamber. In some embodiments, apparatus for high pressure plasma processing includes: an electrostatic chuck; a ground return bracket spaced apart from the electrostatic chuck; and a dielectric plate disposed between the electrostatic chuck and the ground return bracket.

Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O.sub.2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of O.sub.2 or chloride (Cl.sub.2) while supplying nitrogen (N.sub.2) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.

Embodiments of a slip ring for use in a rotatable substrate support are provided herein. In some embodiments a slip ring includes a main body having a top wall, a bottom wall, and a sidewall extending between the top and bottom walls, wherein the top wall, bottom wall, and sidewall define an inner volume within the main body, wherein a central opening is formed through the top wall; a plurality of annular containers disposed within the inner volume and coaxially with the main body, wherein the plurality of annular containers are vertically spaced apart from one another, and wherein each of the plurality of annular containers contains a first volume of an electrically conductive liquid; an upper cylindrical body rotatably disposed in the central opening; a lower cylindrical body fixedly coupled to the lower wall of the main body.