Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated together with the spin chuck; and a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position wherein the chuck pin is spaced apart from the side portion of the substrate.

Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated with the spin chuck; a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position at which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is rotated by the spin chuck.

Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated together with the spin chuck; a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position at which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is being rotated by the spin chuck.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base bonded to a bottom surface of the ceramic base and having a refrigerant flow channel, a plurality of holes extending through the cooling base in an up and down direction, and a heat exchange promoting portion that is provided in an area around at least one of the plurality of holes and that promotes heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface.

A method for processing a semiconductor wafer is provided. The method includes transferring the semiconductor wafer above a wafer placement device having a plate to align an edge of the semiconductor wafer with a first buffer member positioned in a peripheral region of the plate and to align a center of the semiconductor wafer with a second buffer member positioned in a central region of the plate. Each of the first buffer member and the second buffer member has a stiffness that is less than that of the plate. The method further includes lowering down the semiconductor wafer to place the semiconductor wafer over the plate.

The present invention relates to a substrate support assembly for a substrate treatment apparatus, including: a chuck base disposed opposite to a substrate when the substrate is installed, rotatable around a rotating shaft, and having an installation accommodation portion formed in the lower portion near the outer peripheral surface thereof in a circumferential direction thereof; chuck pins disposed on top of the chuck base and movable along directions away from and approaching the substrate; a mechanism unit disposed in the installation accommodation portion and connected to the chuck pins to move the chuck pins; and a driving unit for transmitting power to the mechanism unit.

Provided is a heat treatment unit, including: a chamber providing a substrate processing apparatus including: a process chamber in which an upper chamber and a lower chamber are in contact with each other to form a treatment space defined by the upper chamber and the lower chamber; a heating plate positioned in the treatment space to heat a substrate; a lift pin for placing the substrate on the heating plate or for moving the substrate placed on the heating plate to be spaced apart from the heating plate; a driving member connected to the upper chamber or the lower chamber to vertically drive the upper chamber or the lower chamber; an exhaust member connected to a central region of the upper chamber to exhaust the treatment space; and an airflow blocking member provided on an upper surface of the heating plate and formed to surround an edge of the substrate so as to block a surrounding airflow from approaching the edge of the substrate.

The present invention relates to a substrate support assembly for a substrate treatment apparatus, including: a chuck base supporting the substrate to be treated, disposed rotatable around a rotating shaft, and having as installation accommodation portion formed near the outer peripheral surface thereof in a circumferential direction thereof and a receiving recess formed open on the top thereof at the inside surrounded by the installation accommodation portion; chuck pins disposed on the top of the installation accommodation portion of the chuck base and movable along directions away from and approaching the substrate; a mechanism unit disposed in the installation accommodation portion and connected to the chuck pins to move the chuck gins; a driving unit for transmitting power to the mechanism unit; and as ultrasonic cleaning unit disposed in the receiving recess.

A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber body having a top body and a bottom body which combine to provide a treating space therein; a substrate support unit configured to support a substrate at the treating space; a fluid supply unit configured to supply a treating fluid to the treating space; a fluid exhaust line for exhausting the treating fluid from the treating space; and a guide member provided to surround a periphery of the substrate supported by the substrate support unit.