Provided is a support unit including a support plate on which the substrate is placed, and a support protrusion provided on the support plate and separating the substrate from the support plate, wherein the support plate includes a first protrusion protruding from an upper surface of the support plate, wherein the first protrusion is provided in a support region provided by the support protrusion.

A method includes placing a wafer on a susceptor, wherein the wafer has a first radius, wherein a top surface of the susceptor has a second radius that is greater than the first radius; using microwave radiation to heat the wafer and the susceptor; and removing the wafer from the susceptor.

An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

The disclosure provides one technique for suppressing wear of a cleaning member and unexpected dust generation. A substrate support mechanism 100 includes a first support part 110 which is swingable and has a contact region that can come into contact with a peripheral edge of one surface of a substrate W in a closed state, a second support part 120 which supports the other surface of the substrate W, and a first support part moving part 140 which swings the first support part 110.

A substrate processing apparatus is provided. The apparatus comprises a chamber; a substrate support which is arranged in the chamber and has at least one first gas supply path; and at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path. The substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface. The upper surface has a plurality of protrusions and a first annular groove group. The first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove. Any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path.

Embodiments of substrate supports for use in microwave degas chambers are provided herein. In some embodiments, a substrate support for use in a microwave degas chamber includes a support plate having one or more support features for supporting a substrate; a susceptor comprising a plate disposed on the support plate, wherein the susceptor includes one or more openings, wherein the one or more support features extend through corresponding ones of the one or more openings; and a metal foil disposed beneath a side of the susceptor facing the support plate.

A substrate processing apparatus includes a liquid processing module, including a carry-out/in port of a substrate, in which a first liquid processing device and a second liquid processing device provided at a position farther from the carry-out/in port than the first liquid processing device is are provided; and a transfer device configured to carry the substrate out from and into the liquid processing module. The first liquid processing device performs a first liquid processing on the substrate. The second liquid processing device performs a second liquid processing on the substrate before or after the first liquid processing. The transfer device includes a substrate holder configured to be moved back and forth in a first horizontal direction, and carries the non-processed substrate into the first liquid processing device through the carry-out/in port and carries the processed substrate out from the first liquid processing device through the carry-out/in port.

An electrostatic chuck includes a ceramic body and adapter objects. The adapter objects collectively form a plurality of openings distributed over a bottom surface of the ceramic body at different distances from a center of a circle defined by the bottom surface of the ceramic body.

An apparatus for treating a substrate includes a housing having a treatment space inside, a gas supply unit that supplies a hydrophobic gas into the treatment space to hydrophobicize the substrate, and a support unit that supports the substrate in the treatment space. The support unit includes a support plate, a heating member that heats the substrate placed on the support plate, and a height adjustment member that changes a position of the substrate between a first position spaced apart upward from an upper surface of the support plate by a first distance and a second position spaced apart upward from the upper surface of the support plate by a second distance, and the second position is a higher position than the first position.

A substrate support is configured to support a substrate. The substrate support comprises a plurality of burls protruding from a base surface of the substrate support. The burls have distal ends in a plane for supporting a lower surface of the substrate with a gap between the base surface of the substrate support and the lower surface of the substrate. The substrate support comprises a liquid supply channel for supplying a conductive liquid to the gap so as to bridge the gap between the base surface of the substrate support and the lower surface of the substrate, thereby allowing charge to pass between the substrate support and the substrate. The substrate support has a controlled electrical potential such that charge distribution at the lower surface of the substrate can be manipulated.