An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

A heater component has a substrate part and a thin coating heater which is equipped outside this substrate part and generates heat by power supply. The thin coating heater is formed of a thermal sprayed coating. The thin coating heater has a heater body and a heater extension part. The heater body is arranged on a first end face of the substrate part. The heater extension part is extended from the heater body to a second end face of the substrate part through a side surface of the substrate part. A tip part of the heater extension part is a heater power supplying part for supplying electric power to the heater body.

Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

A susceptor used in a deposition reactor provides heat input and controls the build-up of errant deposition. The susceptor heats a substrate tape within the reactor upon which one or more thin films are deposited, particularly high temperature superconductor (HTS) thin films produced in a MOCVD reactor.

Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.

A method for dry cleaning a susceptor is performed after a substrate is removed from a processing chamber of a substrate processing apparatus. In the method, a cleaning gas for dry cleaning is supplied to a first region including a substrate receiving region in the susceptor. The cleaning gas is regionally supplied to a second region where the cleaning gas is difficult to reach when the cleaning gas is supplied to the first region.

A method includes providing a first plate including a first surface, a second surface opposite to the first surface, and a first recess indented from the first surface towards the second surface; providing a semiconductor structure including a third surface, a fourth surface opposite to the third surface, and a first sidewall extending between the third surface and the fourth surface; placing the semiconductor structure over the first plate; and disposing a priming material over the third surface of the semiconductor structure, wherein a peripheral portion of the fourth surface of the semiconductor structure is in contact with the first surface of the first plate upon the disposing of the priming material.

Implementations described herein provide a substrate support assembly. The substrate support assembly has a first ceramic plate having a workpiece supporting surface and a bottom surface. The first ceramic plate has a plurality of secondary heaters each forming a plurality of micro zones. The substrate support assembly has a second ceramic plate having an upper surface and a lower surface. A first metal bonding layer is disposed between the bottom surface of the first ceramic plate and the upper surface of the second ceramic plate. A third ceramic plate has a top portion and a bottom portion. The third ceramic plate has primary heaters. A second metal bonding layer is disposed between the lower surface of the second ceramic plate and the top portion of the third ceramic plate.

An apparatus, system and method for providing a stationary chuck for positionally maintaining an associated inprocess wafer. The stationary chuck may include a base plate having, on an upper surface thereof, a plurality of machined concentric ridges that form a series of concentric circular zones; a silicon carbide coating on the upper surface of the base plate; and a plurality of silicon carbide inlays capable of being bonded onto the silicon carbide coating in the concentric circular zones.