There is provided a substrate holder including: a ceramic base member; electrodes embedded in the ceramic base member; at least one conductive member embedded in the ceramic base member; connecting parts each of which has an end electrically connected to one of the electrodes; a land electrically connected to the at least one conductive member; and terminals each of which has an end connected to one of the electrodes, the at least one conductive member or the land. A resistance value between a connecting part, included in the connecting parts and connected to the at least one conductive member, and a terminal, included in the terminals and connected to the at least one conductive member is smaller than a resistance value between both ends of each of the electrodes; and the number of the terminals is smaller than two times the number of the electrodes.

Disclosed are systems and methods for processing gift transactions. An example method includes receiving an identification of a first merchant from a giver at a first time, wherein a gift from the giver to a recipient is redeemable at the first merchant. The method can include generating a policy comprising the first merchant. The policy can be at least in part giver-defined and linked to the recipient payment account. The method can then include transmitting an electronic notice to a recipient device, receiving a selection from the recipient of a second merchant at which to redeem the gift from the giver, updating the policy to apply to the second merchant selected by the recipient to yield an updated policy and, upon receiving an indication of a triggering event caused by use of the recipient payment account as defined by the updated policy, applying an amount of money to the gift.

Embodiments of the present disclosure describe semiconductor equipment devices having a metal workpiece and a diamond-like carbon (DLC) coating disposed on a surface of the metal workpiece, thermal semiconductor test pedestals having a metal plate and a DLC coating disposed on a surface of the metal plate, techniques for fabricating thermal semiconductor test pedestals with DLC coatings, and associated configurations. A thermal semiconductor test pedestal may include a metal plate and a DLC coating disposed on a surface of the metal plate. The metal plate may include a metal block formed of a first metal and a metal coating layer formed of a second metal between the metal block and the DLC coating. An adhesion strength promoter layer may be disposed between the metal coating layer and the DLC coating. Other embodiments may be described and/or claimed.

An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.

A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

A method of depositing material to manufacture an electrostatic chuck is provided. The method first deposits at least one layer of a first dielectric material on a handle using spin coating and/or direct spraying method. A functional electric layer is next deposited on the at least one layer of the first dielectric material. Finally, the electrostatic chuck if formed by depositing at least one layer of a second dielectric material on the functional electric layer and the first dielectric material using spin coating and/or direct spraying method.

An apparatus for processing wafer-shaped articles comprises a rotary chuck adapted to hold a wafer shaped article thereon. The rotary chuck comprises a peripheral series of pins configured to contact an edge region of a wafer-shaped article. Each of the pins projects from the rotary chuck, and each of the pins comprises a projecting portion having a gripping element at a distal end thereof, and a proximal portion comprising a drive mechanism at a proximal end thereof by which the pin can be rotated. The projecting portion and the proximal portion comprise interengageable connectors configured to allow the projecting and proximal portions to be interconnected by pressing the projecting portion against the proximal portion and to be disconnected by pulling the projecting portion away from the proximal portion.

A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

A reactor can include a reaction chamber, a substrate support configured to support a substrate on a top side of the substrate support, and an elongate delivery apparatus disposed within the reaction chamber. The substrate support may be actuated to an upper position and to a lower position along a vertical axis within the reaction chamber. The substrate support may have a maximum horizontal dimension from the vertical axis along a horizontal axis substantially orthogonal to the vertical axis. The elongate delivery apparatus may have an inner horizontal dimension greater than the maximum horizontal dimension of the substrate support. The delivery apparatus can allow gas to pass through an interior of the delivery apparatus. The delivery apparatus can include a plurality of apertures. Each of the plurality of apertures can allow passage of the gas from the interior of the delivery apparatus into the reaction chamber.