A substrate support for supporting a substrate when forming a film on a surface of the substrate by chemical vapor deposition. The substrate support includes a graphite material having a recessed portion for accommodating the substrate, a multilayer film on the recessed portion and consisting of a first degassing prevention film of SiC and a sublimation prevention film of TaC or HfC stacked together, and a second degassing prevention film of SiC located on portions of the graphite material other than the recessed portion.

A method of manufacturing a chamber component for a processing chamber comprises forming a green body using a Y.sub.2O.sub.3—ZrO.sub.2 powder consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2; and sintering the green body to produce a sintered ceramic body consisting essentially of one or more phase of Y.sub.2O.sub.3—ZrO.sub.2, the sintered ceramic body consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2.

The present disclosure discloses a fixing apparatus for fixing a substrate to be processed below a bearing base during an evaporation process, the substrate to be processed includes a base substrate, a ferromagnetic material is formed on a front surface or a back surface of the base substrate, and a magnetic field generator is disposed on a back surface of the bearing base at a location corresponding to the ferromagnetic material; the magnetic field generator is configured to generate a magnetic field so that the ferromagnetic material and the magnetic field generator are approaching to each other under an effect of the magnetic field generated by the magnetic field generator to fix a front surface of the bearing base with the back surface of the base substrate. An evaporation method is further disclosed.

A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.

A substrate holder, for a lithographic apparatus, having a main body, a plurality of support elements to support a substrate and a seal unit. The seal unit may include a first seal positioned outward of and surrounding the plurality of support elements. A position of a substrate contact region of an upper surface of the first seal may be arranged at a distance from the plurality of support elements sufficient enough such that during the loading/unloading of the substrate, a force applied to the first seal by the substrate is greater than a force applied to the plurality of support elements by the substrate. A profile of the contact region, in a cross section through the seal, may have a shape which is configured such that during the loading/unloading of the substrate, the substrate contacts the seal via at least two different points of the profile.

A wafer placement table has a wafer placement surface that allows a wafer to be placed thereon. The wafer placement table includes a ceramic substrate having a built-in electrode, a cooling substrate including a refrigerant flow path, a metal joining layer that joins the ceramic substrate to the cooling substrate, and a plurality of small protrusions disposed on a reference plane of the wafer placement surface. The top surfaces of the small protrusions can support the lower surface of a wafer. The top surfaces of all the small protrusions are located on the same plane. In a flow path overlapping range of the wafer placement surface in which the wafer placement surface overlaps the refrigerant flow path in plan view, an area ratio of the small protrusions is minimized in a portion facing a most upstream portion of the refrigerant flow path.

A low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an α-structure silicon carbide power having an average particle diameter of 0.3 to 3 μm and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a B.sub.4C sintering aid, or with a sintering aid comprising Al.sub.2O.sub.3 and Y.sub.2O.sub.3 with total amount of 3 to 15 weight parts, and then a mixture of the α-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace.

Provided is a lift pin for an epitaxial growth apparatus, which can prevent the back surface of a silicon wafer from being damaged by the lift pin, reduce emission of dust due to the rubbing of the lift pin against the wall surface of a through hole in a susceptor, and prevent peeling of glassy carbon. The lift pin has a straight trunk part to be inserted through the through hole; a head part to be made to abut a silicon wafer; and a cover part covering at least a top of the head part. The straight trunk part and the head part are made of a porous body, the cover part is made of a carbon-based covering material, and at least part of voids of the porous body of the head part is filled with the cover part.

A semiconductor manufacturing apparatus includes: a stage configured to support a semiconductor substrate; and a conductive annular member provided at an outer circumferential portion of the stage and configured to enclose the semiconductor substrate when supported on the stage. The stage has a groove that is provided below a lower portion of an inner circumferential end of the annular member.

Embodiments of substrate carriers and method of making the same are provided herein. In some embodiments, a substrate carrier includes a substantially planar body formed of an upper layer stacked on a lower layer; and a plurality of pockets formed in the substantially planar body each of which includes a support surface surrounding the pocket for supporting a substrate.