Disclosed is a method for manufacturing a ceramic susceptor, the method including: preparing ceramic sheets; preparing a lamination structure of a molded body, in which the ceramic sheets are laminated and a conductive metal layer for electrodes is disposed between the ceramic sheet laminated products; and sintering the lamination structure of the molded body, wherein the preparing of the ceramic sheets includes: obtaining a vitrified first additive powder by heat-treating a slurry containing MgO, SiO.sub.2, and CaO; preparing a slurry by mixing an Al.sub.2O.sub.3 powder with the first additive powder, a second additive powder containing a MgO powder, and a third additive powder containing a Y.sub.2O.sub.3 powder; and forming the ceramic sheets by tape casting the slurry.

Provided is a substrate support unit including an electrostatic chuck configured to fix a wafer, an insulating isolation unit, which is arranged below the electrostatic chuck and is configured to insulate the electrostatic chuck, and a ground plate arranged below the insulating isolation unit, wherein the electrostatic chuck, the insulating isolation unit, and the ground plate are spaced apart from each other in a vertical direction, and a lower surface of the electrostatic chuck, a surface of the insulating isolation unit, or a surface of the ground plate has hydrophobicity.

A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.

The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.

Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

A workpiece holding tool includes a substrate, a base, and a cylindrical member. The base includes a gas flow channel including a first portion and a second portion. The first portion extends parallel to a bonding surface of the base. The second portion forms branch connection with the first portion and extends perpendicularly to the bonding surface to be open in the bonding surface. The cylindrical member includes a cylindrical body portion located along the second portion and a cylindrical extension portion continuous with the body portion and extending to the first portion.

Provided is an apparatus for processing a substrate, which includes a chamber having a processing space in which a process of depositing a thin-film on a substrate is performed and a structure which is installed to expose at least one surface to the processing space and in which a coating layer made of a polymer forming at least one of covalent bond and double bond at an end tail is formed on the surface exposed to the processing space.

Thus, the substrate processing apparatus in accordance with an exemplary embodiment may restrict or prevent particle generation and substrate pollution generation caused by a thin-film deposited in the chamber. Also, a period of cleaning the chamber and a structure or a component in the chamber may be extended. Thus, a product yield rate and an apparatus operation efficiency may improve.

The present invention relates to a susceptor including a substrate including a carbon material and having one main surface on which a silicon water is to be placed, and another main surface facing the one main surface, in which an entire surface of the substrate is covered with a thin film including silicon carbide, the one main surface has an emissivity variation of 3% or less, and a ratio of an average emissivity between the one main surface and the another main surface facing the one main surface is from 1:1 to 1:0.8.

A method includes placing a wafer on a susceptor, wherein the wafer has a first radius, wherein a top surface of the susceptor has a second radius that is greater than the first radius; using microwave radiation to heat the wafer and the susceptor; and removing the wafer from the susceptor.