A cutting apparatus includes a table including a support plate transparent in a visible region, a cutting unit, a first feeding mechanism that includes a first moving section for supporting the table and a first motor, a second feeding mechanism that includes a second moving section for supporting the cutting unit and a second motor, a first camera disposed on the side of a first surface of the support plate, a second camera disposed on the side of a second surface opposite to the first surface of the support plate, and a storage section that stores positional deviation amounts in the X-axis direction and the Y-axis direction between an imaging region at a reference position of the first camera and an imaging region at a reference position of the second camera.

Exemplary substrate support assemblies may include a platen characterized by a first surface configured to support a semiconductor substrate. The assemblies may include a first stem section coupled with a second surface of the platen opposite the first surface of the platen. The assemblies may include a second stem section coupled with the first stem section. The second stem section may include a housing and a rod holder disposed within the housing. The second stem section may include a connector seated within the rod holder at a first end of the connector. The second stem section may include a heater rod disposed within the first end of the connector and a heater extension rod coupled with the connector at a second end of the connector. The second stem section may include an RF rod and an RF strap coupling the RF rod with an RF extension rod.

A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.

A substrate alignment device includes first and second support members that are arranged to be opposite to each other and be spaced apart from each other in a plan view, and respectively support an outer peripheral end of a substrate from a position below the substrate. Further, the substrate alignment device includes a first pressing member that is arranged to be opposite to the first support member in a plan view, and moves the substrate by pressing one portion of the outer peripheral end of the substrate in a first direction directed from the second support member toward the first support member with the substrate supported by the first and second support members. The first support member includes a movement limiter that limits movement of the substrate in the first direction past a predetermined prescribed position.

There are provided a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes: a stage on which a substrate is seated, in a chamber; and a treatment liquid supply apparatus supplying a treatment liquid containing a solvent and a solute onto the substrate, wherein the treatment liquid supply apparatus supplies the treatment liquid onto the substrate while moving from a center of the substrate to an outer peripheral surface of the substrate.

A wafer treatment apparatus includes a wafer supporter for supporting and rotating a wafer, a frontside liquid discharger for discharging a liquid toward a frontside of the wafer, a backside liquid discharger for discharging the liquid toward a backside of the wafer, a treatment chamber for accommodating the wafer supporter, and including liquid collecting inlets stacked on each other and receiving the liquid discharged from at least one of the frontside and backside liquid dischargers, and a controller for controlling a height of an upper end of a first liquid collecting inlet of the liquid collecting inlets to have one of a first height in a process of discharging the liquid to the backside of the wafer adjacent to the wafer supporter and a second height, lower than the first height, in a process of discharging the liquid to the frontside of the wafer.

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

A cleaner comes into contact with a lower-surface center region of a substrate held by a first holder, so that the lower-surface center region is cleaned. The cleaner comes into contact with a lower-surface outer region of the substrate rotated by a second holder, so that the lower-surface outer region of the substrate is cleaned. During cleaning of the lower-surface center region, the second holder is rotated about a vertical axis while not holding the substrate. Alternatively, during cleaning of the lower-surface center region, the gas injector arranged between the cleaner and the second holder injects gas toward the substrate from a first height spaced apart from the substrate by a predetermined distance. Further, during drying of the lower-surface center region, the gas injector injects gas toward the substrate from a second height closer to the substrate than the first height.

A transport apparatus includes a hand, a drive mechanism, a cover member, and a gas supply member. The hand is configured to hold a wafer. The drive mechanism is configured to transport the wafer by moving the hand. The cover member has an opposing surface opposed to a surface of the wafer held by the hand and is formed with a plurality of holes opened in the opposing surface. The gas supply member is configured to supply an inert gas to the surface of the wafer via the plurality of holes of the cover member. The plurality of holes are formed in the opposing surface so that an opening ratio of an outer peripheral portion of the opposing surface is higher than an opening ratio of a central portion of the opposing surface.