An ion beam deposition apparatus includes a substrate assembly to secure a substrate, a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials, an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate, and a substrate heater to heat the substrate to a deposition temperature higher than a room temperature.

An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy, equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to the back side of the substrate.

In some embodiments, the present disclosure relates to a process tool that includes a lithography apparatus arranged over a wafer chuck and an immersion hood apparatus laterally around the lithography apparatus. The lithography apparatus includes a photomask arranged between a light source and a lens. The immersion hood apparatus comprises input piping, output piping, and extractor piping. The input piping is arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lens and the wafer chuck. The output piping is arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the lens and the wafer chuck. The extractor piping is arranged on an outer sidewall of the immersion hood apparatus and configured to remove any liquid above the wafer chuck that is outside of the immersion hood apparatus.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.

A method and apparatus for aligning components within a processing module are described herein. The components include a substrate transfer device, a plurality of support chuck assemblies, and adjustable bushings disposed in the processing module. The substrate transfer device includes support arms with heads configured to passively correct the location of a substrate therein. The orientation of each of the support arms of the substrate transfer device is adjusted to align with each of the support chuck assemblies. The location of a process station is then adjusted to align with one of the support chuck assemblies by calibrating the adjustable bushings which correspond to each process station.

Described herein is a technique capable of improving a uniformity of the characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and including a plurality of placement parts on which the substrate is placed; a main nozzle provided so as to face a placement part among the plurality of the placement parts and including a first portion where no hole is provided so as to thermally decompose a process gas; and an auxiliary nozzle provided so as to face the placement part and including a second portion where no hole is provided so as to thermally decompose the process gas.

A substrate processing device according to an embodiment of the present invention includes a disk part disposed in a chamber in which a heating means is provided, and a pocket part installed on one surface of the disk part and on which a substrate is seated. A heat hole through which heat generated by the heating means passes may be formed on an installation surface of the disk part on which the pocket part is installed, or a gear hole through which the heat of the heating means passes may be formed in a pocket gear facing the disk part.

A particle removed from a substrate is suppressed from adhering to the substrate again. A substrate cleaning apparatus includes a substrate holder configured to hold the substrate; a gas nozzle configured to jet a cleaning gas to the substrate on the substrate holder; and a nozzle cover provided to surround the gas nozzle. The cleaning gas is jetted to a decompression chamber of the nozzle cover from the gas nozzle, and a gas cluster configured to remove the particle on the substrate in the decompression chamber is generated. A gas for a gas curtain is jetted from an end portion of the nozzle cover toward the substrate, and the gas curtain is formed between the substrate and the end portion of the nozzle cover.

A particle removed from a substrate is suppressed from adhering to the substrate again. A substrate cleaning apparatus includes a substrate holder configured to hold the substrate; a gas nozzle configured to jet a cleaning gas to the substrate on the substrate holder; and a nozzle cover provided to surround the gas nozzle. The cleaning gas is jetted to a decompression chamber of the nozzle cover from the gas nozzle, and a gas cluster configured to remove the particle on the substrate in the decompression chamber is generated. A gas for a gas curtain is jetted from a holder support of the substrate holder toward the nozzle cover, and the gas curtain is formed between the nozzle cover and the holder support.

The present inventive concept relates to a substrate processing apparatus and a spray module of the substrate processing apparatus, the substrate processing apparatus comprising: a chamber for providing a processing space; a lid for covering the upper portion of the chamber; a substrate support portion which supports at least one substrate and rotates about a rotary shaft; a gas spray portion which is above the substrate support portion in a diameter direction from the rotary shaft of the substrate support portion and which sprays a processing gas; and a measuring portion which is arranged to be in parallel with or to be inclined in a direction at a certain angle with respect to the diameter direction on a measurement position that is spaced apart from the diameter direction and which measures the temperature of the substrate supported by the substrate support portion or the temperature of the substrate support portion.