A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a method for producing semiconductor chips in a wafer composite includes providing a carrier having a wafer plane and a reference point, wherein the carrier is configured to accommodate at least one wafer composite in the wafer plane, providing a heating device comprising a heating plane and a first heating unit arranged laterally offset from the reference point in the heating plane, and arranging the heating device with its heating plane parallel to the wafer plane, arranging at least one wafer composite in the wafer plane of the carrier, rotating the carrier and the heating device relative to each other about an axis perpendicular to the heating plane and the wafer plane through the reference point, controlling the first heating unit such that a temperature of the carrier is influenced, providing a bending sensor for determining a bending characteristic value, the bending characteristic value being representative of a bending of the at least one wafer composite relative to the wafer plane and controlling the first heating unit based on the bending characteristic value.

Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

A substrate processing apparatus includes: configured to support a plurality of substrates; a chamber sidewall surrounding at least a side surface of the substrate support; and an upper plate including a plurality of plate portions on the substrate support and spaced apart from the substrate support. The plurality of plate portions and the substrate support collectively at least partially define a plurality of process regions between the plurality of plate portions and the substrate support and a separation between at least two process regions of the plurality of process regions. The plurality of process regions include a pretreatment process region between the pretreatment process plate portion and the substrate support and having a first height, and a deposition process region between the deposition process plate portion and the substrate support and having a second height, greater than the first height.

According to one aspect of a technique of the present disclosure, there is provided a substrate processing apparatus includes: a substrate support; a process chamber; an upstream side gas guide including: a housing connected to a side portion of the process chamber and extending in a direction away from the process chamber; and partition plates arranged in a vertical direction in the housing; a distributor provided with ejection holes arranged in the vertical direction such that a gas is capable of being supplied through the ejection holes between adjacent partition plates, between the housing and an uppermost partition plate or between the housing and a lowermost partition plate; and a process chamber heater provided between the process chamber and the distributor such that a part thereof is located near an adjacent portion of the housing.

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

The present disclosure generally provides for a system and method for measuring one or more characteristics of one or more substrates in a multi-station processing system using one or more metrology modules at a plurality of metrology stations. In one embodiment, a system controller is configured to cause the multi-station processing system to perform a method that includes processing a plurality of substrates at a plurality of processing stations, advancing one or more of the plurality of substrates to a respective metrology station, measuring one or more characteristics of the plurality of substrates at the respective metrology station, determining a processing performance metric based on the one or more characteristics, comparing the processing performance metric to a tolerance limit to determine if an out of tolerance condition has occurred, and adjusting one or more processing parameters when it is determined that an out of tolerance condition has occurred.

A deposition apparatus, includes a chamber having at least one first gas inlet therein. A fixed chuck is installed in the chamber and an electrostatic chuck is installed on the fixed chuck. An edge ring is disposed on an edge of the electrostatic chuck. A shower head is disposed above the edge ring. A baffle is disposed above the shower head and an upper electrode is disposed above the baffle. A gas guide member is disposed above the upper electrode so that a flow path provided in the upper electrode and the first gas inlet are connected. The gas guide member has a flow path hole penetrating in upward and downward directions, and a plurality of guide holes are provided on an inner surface of the gas guide member.

A method of cleaning blind spots around a substrate supporting apparatus by controlling a position of the substrate supporting apparatus includes moving the substrate supporting apparatus relative to a ring and supplying a cleaning gas to an upper space of the substrate supporting apparatus.

Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.