There is provided a technique capable of efficiently transporting a plurality of objects between a storage container configured to store the plurality of objects and a processing apparatus configured to collectively process the plurality of objects. A transport system 1 for transporting a plurality of objects between a storage container 9 configured to store the plurality of objects and a processing apparatus 2 configured to collectively process the plurality of objects held on a tray 8, includes: a mounting part 31 on which the storage container 9 is mounted; a stage 41 on which the plurality of objects are mounted; a tray support part 51 configured to support the tray 8; a first transport device 44 configured to transport the plurality of objects between the storage container 9 mounted on the mounting part 31 and the stage 41; and a second transport device 53 configured to transport the plurality of objects between the stage 41 and the tray 8 supported by the tray support part 51.

A technique capable of improving uniformity of characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect a substrate processing apparatus is provided including: a process chamber for processing a substrate; a substrate support in the process chamber and including a plurality of placement parts for placing the substrate; a rotating part to rotate the substrate support; a heater provided below or within the substrate support; a first nozzle above the placement parts so as to face the placement parts and including a first portion with no hole to thermally decompose a process gas; and a second nozzle above the placement parts and parallel with the first nozzle and including a second portion with no hole to thermally decompose the process gas; and controller for controlling a positional relationship between the substrate and first nozzle via the rotating part.

Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may include a second lid plate coupled with the plurality of lid stacks. The plurality of lid stacks may be positioned between the first lid plate and the second lid plate. A component of each lid stack of the plurality of lid stacks may be coupled with the second lid plate.

A wafer carrier disc installation/uninstallation device and an installation/uninstallation method thereof. The installation/uninstallation device includes a first robotic arm 1, a second robotic arm 2, a carrier disc 3, a main correction mechanism 4, a wafer correction mechanism 5 and a material rest mechanism 6. The carrier disc 3, the main correction mechanism 4, the wafer correction mechanism 5 and the material rest mechanism 6 are positioned within the moving range of the first and second robotic arms 1 and 2. The first robotic arm 1 drives an image capturing assembly 11 and a wafer locating member installation/uninstallation mechanism 12 to move. The second robotic arm 2 drives a wafer taking/placing mechanism 21 to move. Multiple wafer discs 31 are disposed on the carrier disc 3. The main correction mechanism 4 corrects the image capturing assembly 11, the wafer locating member installation/uninstallation mechanism 12 to true operation positions.

Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.

There is provided technique that includes (a) adsorbing a first adsorption inhibitor to a first portion of a substrate by supplying the first adsorption inhibitor to the substrate at a first temperature; (b) after (a), forming a film on a second portion of the substrate by supplying a processing gas to the substrate at a second temperature; (c) after (b), removing at least a part of the first adsorption inhibitor, which is adsorbed to the substrate, at a third temperature higher than the second temperature; (d) after (c), supplying a second adsorption inhibitor to the substrate at a fourth temperature; (e) after (d), supplying the processing gas to the substrate at the second temperature higher than the fourth temperature; and (f) after (e), removing at least a part of the second adsorption inhibitor, which is adsorbed to the substrate, at the third temperature higher than the second temperature.

A modular reaction chamber configured to enable installation of two or more susceptors that are each designed for use in differing temperature ranges (e.g., at differing maximum temperatures). The modular chamber is designed to allow the first and second susceptors and their corresponding heaters to be swapped out or installed to suit the application need (e.g., a low temperature process and a high temperature process). The reaction chamber includes a body adapted, e.g., with an opening in a lower portion of the body, for receiving two or more adaptor or interface plates (or plate assemblies). Each of the plates or plate assemblies is configured for use with a particular susceptor heater assembly (e.g., low temperature heater and high temperature heater and so on) including providing proper cooling and to seal the opening in the lower portion of the reaction chamber body.

RPCVD apparatus for forming a film is disclosed including a showerhead having at least one gas chamber, one or more plasma inlets to deliver plasma from one or more plasma generators into a reaction chamber; and a plurality of gas inlets to deliver gas from at least one gas chamber into the reaction chamber. At least one of the plasma inlets is located at a position that is between a central region and an outer region of the showerhead and off-centre from an axis of rotation. The plasma generators generate plasma in line of sight of the susceptor and the plasma inlets have openings that are larger than openings of the gas inlets. The gas inlets are configured such that a combination of all of the spatial distributions of gas from the gas inlets provides a uniform distribution of gas density on the surface of a susceptor between a central region and an outer region of the susceptor, for a full rotation of the susceptor.

According to one embodiment, a film formation apparatus that suppresses effects of pre-processing and enables stable film formation is provided. A film formation apparatus of the present disclosure includes a chamber that can be made vacuum, a transporter that is provided inside the chamber and that circulates and transports a workpiece in a trajectory of a circle, a film formation unit that forms film by sputtering on the workpiece circulated and transported by the transporter, a load-lock room that loads the workpiece into and out of the chamber relative to air space while keeping an interior of the chamber vacuum, and a pre-processing unit that is provided in the chamber at a position adjacent to the load-lock room and that performs pre-processing to the workpiece loaded in from the load-lock room in a state distant from the transporter.