A grinding equipment includes: a frame which has a central shaft disposed collinearly to one side of the polishing wheel and rotates about the central shaft; a plurality of seating portions which are disposed on the upper side of the frame, each have a space formed in the central portion thereof, seat a workpiece on the upper surfaces thereof, and are arranged radially from the central shaft of the frame; a plurality of vacuum portions which are disposed in the central portions of the plurality of seating portions respectively, seat the workpiece on the upper surfaces thereof, and each have a plurality of flow channels so as to secure the workpiece by suctioning air through the flow channels; and a control unit for controlling the rotation of the frame.

A method for executing a direct transfer of semiconductor device die from a first substrate to transfer locations on a second substrate. The method includes determining a position of impact wires disposed on a transfer head, semiconductor device die, and transfer locations; determining whether there are at least two positions that an impact wire, a semiconductor device die, and a transfer locations are aligned within a threshold tolerance; and transferring, by the impact wires, the semiconductor device die such that the semiconductor device die detaches from the first substrate and attaches to transfer locations on the second substrate. The transferring being completed based at least in part on determining that the impact wire, the semiconductor device die, and the circuit trace are aligned within the threshold tolerance.

A carrier system and method carries a plate-like object to an object mounting member provided with an object mounting section. The system includes an adjustment device that changes a shape of the plate-like object into a predetermined shape before the plate-like object is mounted onto the object mounting section. The plate-like object whose shape is changed into the predetermined shape is mounted onto the object mounting section.

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form division grooves in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyolefin sheet in each region of the polyolefin sheet corresponding to each device chip, pushing up each device chip from the polyolefin sheet side to pick up each device chip from the polyolefin sheet.

A cleaving system and method are described. The system can include a holding apparatus to retain a photovoltaic structure at a center section of a cleaving platform. The system can further include a contact apparatus to make contact with the photovoltaic structure and separate it into a plurality of strips. During operation, the system can activate an actuator to move the contact apparatus against the photovoltaic structure, thereby separating the photovoltaic structure into strips.

Semiconductor device packages may include a support structure having electrical connections therein. Semiconductor device modules may be located on a surface of the support structure. A molding material may at least partially surround each semiconductor module on the surface of the support structure. A thermal management device may be operatively connected to the semiconductor device modules on a side of the semiconductor device modules opposite the support structure. At least some of the semiconductor device modules may include a stack of semiconductor dice, at least two semiconductor dice in the stack being secured to one another by diffusion of electrically conductive material of electrically conductive elements into one another.

A fabrication process employing the use of ScAlN as an etch mask is disclosed. The ScAlN etch mask is chemically nonvolatile in fluorine-based etch chemistries and has a low sputter yield, resulting in greater etch mask selectivity and reduced surface roughness for silicon and other semiconductor materials. The ScAlN etch mask has an etch mask selectivity of greater than 200,000:1 relative to silicon compared to an etch mask selectivity of less than 40,000:1 for a prior art AlN etch mask relative to silicon. Further, due to reduced sputtering of the ScAlN etch mask, and thus reduced micromasking, the ScAlN etch mask yielded a surface roughness of 0.6 m compared to a surface roughness of 2.8 m for an AlN etch mask.

A carrier, an apparatus for manufacturing a display apparatus and including the carrier, and a method of manufacturing a display apparatus are provided. The carrier includes a body portion; an electro permanent magnetic chuck arranged on a boundary portion of the body portion and configured to selectively fix a mask assembly; and a substrate fixing unit arranged in the body portion to selectively fix a display substrate.

A film formation apparatus includes a carrying unit circulating and carrying an electronic component in a sputtering chamber, a film formation processing unit including a mount surface and a mount member which is mounted on the mount surface, and on which the electronic component is placed. The mount member includes a holding sheet having an adhesive surface, and a non-adhesive surface, and a sticking sheet having a first sticking surface with adhesiveness sticking to the non-adhesive surface, and a second sticking surface with adhesiveness sticking to the mount surface of the tray. The adhesive surface includes a pasting region for pasting the electronic components. The first sticking surface sticks across an entire region of the non-adhesive surface corresponding to at least the pasting region to provide a file formation apparatus which employs a simple structure that is capable of suppressing heating of electronic components.

A method of dispersing semiconductor chips from a wafer of semiconductor chips onto a substrate while preserving the neighboring relationship of each chip to each adjacent chip is disclosed. The method includes dispersing the wafer into sequential columns of semiconductor chips with a first pitch between columns while preserving the neighboring relationship and sequentially dispersing the columns of semiconductor chips into rows of individual chips with a second pitch between rows onto a substrate while preserving the neighboring relationship.