An end effector includes a body, a first tine, and a second tine. The body includes first, second, and third substrate support pads, the first substrate support pad defines a first height, the second substrate support pad defines a second height less than the first height, and the third substrate support pad defines a third height equal to the first height. The first tine includes fourth and fifth substrate support pads, the fourth substrate support pad defines a fourth height equal to the second height, and the fifth substrate support pad defines a fifth height equal to the first and third heights. The second tine includes sixth and seventh substrate support pads, the sixth substrate support pad defines a sixth height equal to the first, third, and fifth heights, the seventh substrate support pad defines a seventh height equal to the second and fourth heights.

Embodiments of substrate carriers and method of making the same are provided herein. In some embodiments, a substrate carrier includes a substantially planar body; and a plurality of holding elements arranged on a surface of the substantially planar body, wherein the plurality of holding elements are configured to hold a plurality of substrates on the surface of the substantially planar body, and wherein the plurality of holding elements includes at least three holding elements disposed around a corresponding position of each of the plurality of substrates.

A processing device and method for safely processing a wafer having bumps formed on a surface thereof. A processing device is provided with: a chuck capable of holding a bump region of a wafer; a support ring having a support surface for supporting a bend region which extends from the bump region to an outer peripheral region and in which a film is bent, the support ring capable of supporting the outer peripheral region of the wafer; and a chuck table in which the chuck is housed substantially centrally and the support ring is housed around the chuck.

Substrate tables and methods of manufacturing substrate supports for substrate tables. In one arrangement, a plurality of holes are formed through a base member. A burl formation member is joined to the base member. A plurality of burl structures are formed in the burl formation member. Each burl structure includes a distal surface that contacts, in use, a substrate being supported. Each burl structure has an opening to at least one of the holes formed through the base member.

A stage for heating and cooling an object installed in a chamber 1 includes : a stage body 5, 6 that has a mounting surface on which an object is mounted; a heating unit 7 for heating the mounting surface; and a cooling unit 8 for cooling the mounting surface. The stage body 5, 6 also has a first groove 10 into which the heating unit is inserted and a second groove 10 into which the cooling unit is inserted. The gap between the first groove and the heating unit and the gap between the second groove and the cooling unit have a heat-conductive medium.

Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface. The support assemblies may include a support stem coupled with the electrostatic chuck body. The support assemblies may include an electrode embedded within the electrostatic chuck body proximate the substrate support surface. The support assemblies may include a ground electrode embedded within the electrostatic chuck body. The support assemblies may include one or more channels formed within the electrostatic chuck body between the electrode and the ground electrode.

A substrate processing apparatus includes the following: a support frame, first stage, a suction part, and a plurality of island-type second stages. The support frame is disposed on the first stage. The height of the support frame is lower than the height of the first stage. A plurality of island-type second stages are disposed on the support frame on the same plane as the first stage. The suction part is disposed on the support frame.

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming, during a first duration of time comprising a first time, a top clamp comprising a first set of electrodes and a plurality of burls. The method can further include forming, during a second duration of time comprising a second time that overlaps the first time, a core comprising a plurality of fluid channels configured to carry a thermally conditioned fluid. The method can further include forming, during a third duration of time comprising a third time that overlaps the first time and the second time, a bottom clamp comprising a second set of electrodes. In some aspects, the example method can include manufacturing the electrostatic clamp without an anodic bond.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base provided on a bottom surface side of the ceramic base, and a refrigerant flow channel groove provided in the cooling base so as to open at a bottom surface of the cooling base.