A substrate fixing device includes: a base plate; and an electrostatic chuck that is fixed to the base plate to adsorb a substrate by electrostatic force. The electrostatic chuck includes: an adsorption layer that is formed of ceramic and that contacts the substrate to adsorb and hold the substrate; a first heating layer that is formed on the adsorption layer and that includes a first electrode; a second heating layer that is formed on the first heating layer and that includes a second electrode; and a via that is provided between the first electrode and the second electrode to electrically connect the first electrode and the second electrode to each other. The via includes a body portion, and an end portion that is connected to the body portion. A diameter of the end portion is larger than that of the body portion.

A substrate alignment device includes first and second support members that are arranged to be opposite to each other and be spaced apart from each other in a plan view, and respectively support an outer peripheral end of a substrate from a position below the substrate. Further, the substrate alignment device includes a first pressing member that is arranged to be opposite to the first support member in a plan view, and moves the substrate by pressing one portion of the outer peripheral end of the substrate in a first direction directed from the second support member toward the first support member with the substrate supported by the first and second support members. The first support member includes a movement limiter that limits movement of the substrate in the first direction past a predetermined prescribed position.

Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.

Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.

Provided is a substrate support unit including an electrostatic chuck configured to fix a wafer, an insulating isolation unit, which is arranged below the electrostatic chuck and is configured to insulate the electrostatic chuck, and a ground plate arranged below the insulating isolation unit, wherein the electrostatic chuck, the insulating isolation unit, and the ground plate are spaced apart from each other in a vertical direction, and a lower surface of the electrostatic chuck, a surface of the insulating isolation unit, or a surface of the ground plate has hydrophobicity.

A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.

A wafer treatment apparatus includes a wafer supporter for supporting and rotating a wafer, a frontside liquid discharger for discharging a liquid toward a frontside of the wafer, a backside liquid discharger for discharging the liquid toward a backside of the wafer, a treatment chamber for accommodating the wafer supporter, and including liquid collecting inlets stacked on each other and receiving the liquid discharged from at least one of the frontside and backside liquid dischargers, and a controller for controlling a height of an upper end of a first liquid collecting inlet of the liquid collecting inlets to have one of a first height in a process of discharging the liquid to the backside of the wafer adjacent to the wafer supporter and a second height, lower than the first height, in a process of discharging the liquid to the frontside of the wafer.

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.