A method deposits an epitaxial layer on a front side of a semiconductor wafer having monocrystalline material. The method includes: providing the semiconductor wafer; arranging the semiconductor wafer on a susceptor; heating the semiconductor wafer to a deposition temperature using thermal radiation directed to the front side and to the rear side of the semiconductor wafer; conducting a deposition gas over the front side of the semiconductor wafer; and selectively reducing an intensity of a portion of the thermal radiation that is directed to the rear side of the semiconductor wafer, as a result of which first partial regions at an edge of the semiconductor wafer, in the first partial regions a growth rate of the epitaxial layer is greater than in adjacent second partial regions given uniform temperature of the semiconductor wafer owing to an orientation of the monocrystalline material, are heated more weakly.

The present invention provides a stage which comprises: a plate-shaped member having a mounting surface on which a workpiece to be processed is mounted and a rear surface facing the mounting surface, said plate-shaped member being provided with a through hole that penetrates through the mounting surface and the rear surface; and an embedded member disposed inside the through hole. This stage is configured such that the surface of the embedded member is provided with at least one of a concave portion and a convex portion.

A first lift pin holder assembly includes a base portion and a stem portion including a ball lock mechanism to hold a lift pin. A second lift pin holder assembly includes a base portion and a stem portion including a fork lock mechanism to hold a lift pin. A slotted ring with coin-slot type slots is arranged on abase of a substrate support assembly. A plurality of the first or second lift pin holder assemblies are retained in the slots using retainers that surround the base portions of the lift pin holder assemblies. Each slot includes an aperture in which a T-shaped retainer is inserted. The top portion of the T-shaped retainer prevents the retainer and the lift pin holder assembly from sliding out of the slot. The lift pin, the lift pin holder assemblies, the retainers, the T-shaped retainer, and the slotted ring are made of ceramic materials.

Embodiments of substrate supports for use in microwave degas chambers are provided herein. In some embodiments, a substrate support for use in a microwave degas chamber includes a support plate having one or more support features for supporting a substrate; a susceptor comprising a plate disposed on the support plate, wherein the susceptor includes one or more openings, wherein the one or more support features extend through corresponding ones of the one or more openings; and a metal foil disposed beneath a side of the susceptor facing the support plate.

A substrate cleaning apparatus and related apparatuses/methods are disclosed. In one embodiment, a substrate cleaning apparatus includes: a first spindle group including a first driving spindle having a first driving roller configured to rotate a substrate and an idler spindle having a driven roller rotated by the substrate; a second spindle group including a plurality of second driving spindles each having a second driving roller configured to rotate the substrate; a cleaning mechanism configured to clean the substrate rotated by the first driving roller and the plurality of second driving rollers; and a rotation detector configured to detect the rotational speed of the driven roller. The driven roller is positioned on the opposite side to a direction in which the substrate receives a force from the cleaning mechanism.

A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.

A substrate processing device according to an embodiment of the present invention includes a disk part disposed in a chamber in which a heating means is provided, and a pocket part installed on one surface of the disk part and on which a substrate is seated. A heat hole through which heat generated by the heating means passes may be formed on an installation surface of the disk part on which the pocket part is installed, or a gear hole through which the heat of the heating means passes may be formed in a pocket gear facing the disk part.

A thermal insulation structure includes an insulation layer having a first surface proximate a cooling device and a second surface opposing the first surface. A heater is disposed proximate the second surface, and a protective layer is disposed proximate the heater layer such that the heater layer is disposed between the insulation layer and the protective layer. The heater layer is configured to reduce frost or ice buildup on an exterior surface of the insulation layer.

A wafer placement table includes a ceramic substrate that has a wafer placement surface, a first electrode that is embedded in the ceramic substrate, a first power supply terminal that is inserted from a surface of the ceramic substrate opposite the wafer placement surface toward the first electrode, a first joint that joins the first electrode and the first power supply terminal to each other and a second electrode that is disposed between the wafer placement surface and the first electrode in the ceramic substrate. A linear portion that extends in the ceramic substrate from a position on the first electrode opposite the first joint to the wafer placement surface is composed of material of the ceramic substrate.

Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.