Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/70
Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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H01L21/71
Manufacture of specific parts of devices defined in group H01L21/70
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H01L21/76
Making of isolation regions between components
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H01L21/762
Dielectric regions; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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H01L21/76297
Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
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H01L21/76297

Substrates with Buried Isolation Layers and Methods of Formation Thereof
20170154808 · 2017-06-01 ·

A method for fabricating a semiconductor device includes forming an opening in a first epitaxial lateral overgrowth region to expose a surface of the semiconductor substrate within the opening. The method further includes forming an insulation region at the exposed surface of the semiconductor substrate within the opening and filling the opening with a second semiconductor material to form a second epitaxial lateral overgrowth region using a lateral epitaxial growth process.

Shallow trench isolation regions made from crystalline oxides
09589827 · 2017-03-07 · ·

A method of manufacturing a semiconductor device that involves etching a trench in a semiconductor substrate, epitaxially growing a crystalline structure in the trench and forming semiconductor structures on either side of the crystalline structure. Crystalline oxides may include rare earth oxides, aluminum oxides or Perovskites.

SHALLOW TRENCH ISOLATION REGIONS MADE FROM CRYSTALLINE OXIDES
20170025305 · 2017-01-26 ·

A method of manufacturing a semiconductor device that involves etching a trench in a semiconductor substrate, epitaxially growing a crystalline structure in the trench and forming semiconductor structures on either side of the crystalline structure. Crystalline oxides may include rare earth oxides, aluminum oxides or Perovskites.